Nanoscale Adv.
 2025
DOI: 10.1039/d4na00830h
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Stacking-dependent and electric field-driven electronic properties and band alignment transitions in γ-GeSe/Ga2SSe heterostructures: a first-principles study

Nguyen V. Vinh,
D. V. Lu,
K. D. Pham

Abstract: In this work, we present a comprehensive investigation into the electronic properties and contact behavior of γ-GeSe/Ga2SSe heterostructures using first-principles calculations.

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