Stacking Fault Energies of Tetrahedrally Coordinated Crystals

Takeuchi, Shin; Suzuki, Kunio

doi:10.1002/(sici)1521-396x(199901)171:1<99::aid-pssa99>3.0.co;2-b

Cited by 103 publications

(57 citation statements)

References 27 publications

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“…In the literature [52] only formation energies of stacking faults (SFs) are listed. Nevertheless, the low formation energy of the intrinsic stacking fault is consistent with experimental observations by Takeuchi et al [52], who estimated the formation energy based on the width of 60…”

Section: Stacking-fault Formationmentioning

confidence: 99%

Polytypism in ZnS, ZnSe, and ZnTe: First-principles study

et al. 2014

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Section: Stacking-fault Formationmentioning

confidence: 99%

Polytypism in ZnS, ZnSe, and ZnTe: First-principles study

et al. 2014

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“…The value for G of 6.36 × 10 10 N/m 2 is used [17], which is the effective value for defects on {111} planes. The SF energy for the Si nc (γ Si nc ) is estimated to be 84 ± 9 mJ/m 2 , which is much higher than that for bulk Si reported in the literature [10,11,[14][15][16][17]. Therefore, we can deduce that the probability for the formation of SFs in Si nc is less than that in bulk Si.…”

Section: Resultsmentioning

confidence: 61%

“…Experimental observations indicated that the size of the stacking faults range from 30 to 50Å [11][12][13], and the value for the intrinsic stacking faults energy is calculated to be 55 ± 7 mJ/m 2 [10,11,14] or 69 mJ/m 2 [15,16]. However, the stacking fault energy for Si nc has not been determined yet.…”

Section: Resultsmentioning

confidence: 99%

Stacking Fault Energy of Si Nanocrystals Embedded in SiO2

Wang

Liang

Ross

2011

ISRN Nanotechnology

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Si nanocrystals (Si nc) were produced by the implantation of Si + into a SiO 2 film on (100) Si, followed by high-temperature annealing. High-resolution transmission electron microscopy (HRTEM) observation has shown that a perfect dislocation (Burgers vector b = (1/2) 110 ) can dissociate into two Shockley partials (Burgers vector b = (1/6) 112 ) bounding a strip of stacking faults (SFs). The width of the SFs has been determined from the HRTEM image, and the stacking fault energy for Si nc has been calculated. The stacking fault energy for Si nc is compared with that for bulk Si, and the formation probability of defects in Si nc is also discussed. The results will shed a light on the dissociation of dislocations in nanoparticles.

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“…This is interesting in itself as zinc blende is generally considered to be the stable phase of cadmium telluride [13]. Given the similarity in formation energy of the two phases however, the nearly equal preponderance should not come as a huge surprise [14]. Clearly, large sections of multiple grains would have to be inspected in order to obtain a statistical analysis of the tendency of one phase or the other to form within the cell.…”

Section: Discussionmentioning

confidence: 99%