Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging

Abstract

In the transition from graphene to graphite, the addition of each individual graphene layer modifies the electronic structure and produces a different material with unique properties. Controlled growth of few-layer graphene is therefore of fundamental interest and will provide access to materials with engineered electronic structure. Here we combine isothermal growth and etching experiments with in situ scanning electron microscopy to reveal the stacking sequence and interlayer coupling strength in few-layer graphene. The observed layer-dependent etching rates reveal the relative strength of the graphene–graphene and graphene–substrate interaction and the resulting mode of adlayer growth. Scanning tunnelling microscopy and density functional theory calculations confirm a strong coupling between graphene edge atoms and platinum. Simulated etching confirms that etching can be viewed as reversed growth. This work demonstrates that real-time imaging under controlled atmosphere is a powerful method for designing synthesis protocols for sp2 carbon nanostructures in between graphene and graphite.

Structure of graphene and its disorders: a review

“…The controlled growth of FLG with specified stacking sequences can be performed in the chamber of an environmental scanning electron microscope (ESEM) which enables real-time imaging of the shape and size evolution of graphene islands [173]. Infrared (IR) absorption/reflection spectroscopy can be used to characterize the stacking order in graphene [124], but this technique has a low spatial resolution [150].…”

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

“…The growth of large‐area high‐quality graphene films is fundamental for the upcoming graphene applications. Chemical vapour deposition (CVD) method offers good prospects to produce large‐size graphene films due to its simplicity, controllability and cost‐efficiency 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75. Many researches have verified that graphene can be catalytically grown on metallic substrates, like ruthenium (Ru),13, 14 iridium (Ir),15, 16 platinum (Pt),17, 18, …”

“…The high catalytic activity and high melting temperature of Pt enables the fast growth of graphene at high temperatures. Besides, the graphene growth on Pt can also be realized by a surface‐mediated process and millimetre‐scale single‐crystal graphene domains can be obtained 19. A smart surface engineering of polycrystalline Pt by coating with silicon‐containing film makes the graphene growth free from the effects of Pt substrate which improves the crystallinity, uniformity and the domain size of graphene 20.…”

Multi-Scale Red-Ox Dynamics of Active Metal Catalysts Revealed by a Combination of In Situ Scanning and Transmission Electron Microscopy

“…In order to observe working catalysts in their active state, we have recently implemented commercially available sample holders for in situ studies under controlled atmosphere and temperature inside a transmission electron microscope. In order to relate local processes that occur on the nanometre scale with collective processes that involve fast movement of large numbers of atoms, we have furthermore adapted an environmental scanning electron microscope (ESEM) for the investigation of catalytically active surfaces [1]. Using these two instruments, we are now able to cover a pressure range from 10 -4 to 10 3 mbar and a spatial resolution ranging from the mm to the sub-nm scale.…”