1990
DOI: 10.1016/0749-6036(90)90334-4
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Staggered-lineup heterojunctions in the system of GaSbInAs

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1992
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Cited by 15 publications
(7 citation statements)
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“…[1][2][3] There are many potential applications for such devices, including infrared optical gas sensors, molecular spectroscopy, night vision, as well as medical applications. In combination with InAs, the wide-gap Ga 1Ϫx In x As y Sb 1Ϫy alloys in the composition range x Ͻ 0.22 can form type II broken-gap heterojunctions with a semimetal channel at the heteroboundary.…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3] There are many potential applications for such devices, including infrared optical gas sensors, molecular spectroscopy, night vision, as well as medical applications. In combination with InAs, the wide-gap Ga 1Ϫx In x As y Sb 1Ϫy alloys in the composition range x Ͻ 0.22 can form type II broken-gap heterojunctions with a semimetal channel at the heteroboundary.…”
Section: Introductionmentioning
confidence: 99%
“…The main properties of the type II HJs grown on GaSb substrate were recently studied and reported elsewhere (see [13][14][15] and [8] with references therein). The first type II quantum well laser based on a staggered GaSb/InGaAsSb single heterojunction was proposed and demonstrated in 1986 at the Ioffe Institute [16]. However, type II brokengap GaInAsSb/InAs heterojunctions and their remarkable interface-induced properties have not been considered enough yet.…”
Section: Introductionmentioning
confidence: 99%
“…The high efficiency of direct radiative recombination in type-I QW structures is favourable for lasing, which results in excellent performance of this kind of laser exhibiting high internal quantum efficiency of 95% [1] and cw RT output optical power up to 1.9 W [2]. In type-II structures the radiative recombination is indirect in real space but its efficiency increases under injection, due to the Coulomb interaction between non-equilibrium carriers, and can reach values sufficient for lasing [3,4]. Besides, with a proper design of the type-II active zone non-radiative Auger processes can be significantly suppressed, which is very important for mid-infrared diode lasers [5].…”
mentioning
confidence: 99%