2009
DOI: 10.1149/1.3074333
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Stain Etching with Fe(III), V(V), and Ce(IV) to Form Microporous Silicon

Abstract: Stain etchants made from ͑HF + V 2 O 5 ͒ or ͑HF + FeCl 3 •6H 2 O + HCl or H 2 SO 4 ͒ exhibited virtually no initiation time before the formation of porous silicon. Etching with Fe͑III͒ solutions for extended periods resulted in a unique dual layer structure that can reach a thickness Ͼ10 m and exhibited not only red-orange but also green photoluminescence ͑PL͒. Etching with ͑CeF 4 + H 2 SO 4 ͒ produced extremely uniform films. Visible PL was observed immediately after etching except for those films produced wi… Show more

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Cited by 42 publications
(32 citation statements)
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“…We started etching the pillars in the BHNO solution to create highly homogeneous tube arrays. We then exposed the structures to the HVO solution to form a more uniform porous layer, see [24,44,67,67]. We used silicon pillars with the highest amount of doping, since according to Nahidi, the PL signal of the corresponding porous silicon is the strongest in this case [68].…”
Section: Optical Characterizationmentioning
confidence: 99%
See 1 more Smart Citation
“…We started etching the pillars in the BHNO solution to create highly homogeneous tube arrays. We then exposed the structures to the HVO solution to form a more uniform porous layer, see [24,44,67,67]. We used silicon pillars with the highest amount of doping, since according to Nahidi, the PL signal of the corresponding porous silicon is the strongest in this case [68].…”
Section: Optical Characterizationmentioning
confidence: 99%
“…Silicon dissolution in fluoride-containing electrolytes is primarily driven by the supply of holes in the silicon [42][43][44]. More details on the chemical reactions involved in stain etching can be found in the supplementary information (SI 2).…”
mentioning
confidence: 99%
“…NH 4 HF 2 can be used to replace HF as long as the solution is acidified (Mills and Kolasinski 2004;Nahidi and Kolasinski 2006). An unusual example is that of CeF 4 dissolved in concentrated H 2 SO 4 (Kolasinski et al 2012;Dudley and Kolasinski 2009a). In this case, the oxidant and fluoride are supplied by the same species.…”
Section: Etchant Compositionmentioning
confidence: 99%
“…The former is used at a concentration of roughly 1 M, the latter closer to 0.1 M (Kolasinski et al 2010(Kolasinski et al , 2012Dudley and Kolasinski 2009a). Reproducible por-Si formation is possible with both oxidants when concentrated HF (aq) (49 wt% ¼ 29 mol L À1 in HF) is used as the acidic fluoride source.…”
Section: +mentioning
confidence: 99%
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