Standard CMOS Process Integrated Silicon-Based Ultraviolet-Infrared Complementary Sensor

Abstract

This study proposes a new ultraviolet-infrared (UV-Ir) compatible sensor fabricated using the standard CMOS process. The concept is verified through a numerical simulation, wherein the standard CMOS process parameters used are evaluated. The proposed sensor is an extension of a previously proposed RGB sensor designed on the standard CMOS process, and calculating the current ratio enables the detection of UV with high sensitivity. In addition, the use of current rectification eliminates the short to middle wavelength region and leaves only the Ir region which is used for detection. High dynamic ranges of 160 dB are ensured for all UV, Ir and RGB which they are excellent for color sensing. Consequently, combined with the previously proposed RGB sensing, the new RGB+UV+Ir sensor is realized without any filters.

Sub-kHz Clock Generation From Room Illumination on Standalone CMOS LSI Chips

“…Light sensing is achieved by silicon-based devices, such as CMOS image sensors with integrated photo-diodes and CMOS switches suitable for digital processing [2]- [4]. Analog LSI chips operated by self-power generations are useful for IoT (Internet of Things) applications, and hence, can be easily implemented to objects with low costs and high availabilities [5].…”