Standard Sample Preparation for the Analysis of Several Metals on Silicon Wafer

Mori, Yoshihiro; Shimanoe, Kengo

doi:10.2116/analsci.12.141

Cited by 12 publications

(6 citation statements)

References 2 publications

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“…We used a ''dipping method'' (SC-1 solution), wherein the wafers were dipped in an acid mixture containing Cu or Ni ions. [10][11][12] Figure 1 shows that there is a correlation between the metal concentration in the solution and that on the wafer surface when the dipping method is used. Surface contamination level was measured by inductively coupled plasma-mass spectrometry (ICP-MS).…”

Section: Experimental Methodsmentioning

confidence: 99%

Changes in Concentrations of Copper and Nickel on Boron-Doped Czochralski-Grown Silicon Surface at Room Temperature

Takeda

Narita²,

Tani-ike³

et al. 2009

jjap

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By neglecting some elementary processes in the helium afterglow at intermediate pressures it is possible to simplify the system of differential equations which describe the time behaviour of discharge parameters, such as the electron temperature, the concentration of atomic and molecular ions and atomic and molecular metastable states.Simple expressions describing the time dependence of each of these parameters are obtained. Calculations based on these expressions agree in most cases with the experimental data available in the literature. The importance of processes which have been neglected is discussed.

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Section: Experimental Methodsmentioning

confidence: 99%

Changes in Concentrations of Copper and Nickel on Boron-Doped Czochralski-Grown Silicon Surface at Room Temperature

Takeda

Narita²,

Tani-ike³

et al. 2009

jjap

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“…The accuracy of TXRF measurement strongly depends on the accuracy of the glancing angle . Figure is a typical angle scan profile of a wafer intentionally contaminated by immersion in alkaline hydrogen peroxide solution (IAP) method. − In this case, only a 0.01° shift in the glancing angle around 0.08° causes a ±14% error in fluorescence, so a high-precision angle adjustment is required for accurate analysis. Because it is difficult to make a perfect angle adjustment mechanically, a feedback control to make the Si Kα intensity from the substrate consistent is commonly employed in commercially available TXRF instruments.…”

Section: Principles and Problemsmentioning

confidence: 99%

Whole-Surface Analysis of Semiconductor Wafers by Accumulating Short-Time Mapping Data of Total-Reflection X-ray Fluorescence Spectrometry

2002

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Total-reflection X-ray fluorescence (TXRF) spectrometry with no chemical preconcentration, often called "straight-TXRF", is now widely used in the semiconductor industry. The small detection area of TXRF enablesmapping measurement of contamination of the semiconductor surface, which is very useful in process characterization. However, the small detection area had been believed to limit rapid whole-surface analysis. Contrary to this general understanding, in this study we demonstrated that a new method, called "sweeping-TXRF", which is essentially short-time multipoint mapping by straight-TXRF, can rapidly provide an average concentration. A considerable problem of this method is the contribution of errors in glancing angle and areal element distribution to the fluorescence. Using statistics, we examined the errors and demonstrated that most of them are canceled and are not significant in actual semiconductor applications. The results of an experiment that measured localized 6 x 10(10) atoms cm(-2) nickel contamination supported the above conclusion. Applying sweeping-TXRF to existing TXRF instruments is easy-the only requirement is a small software modification. We believe that sweeping-TXRF will be utilized for rapid whole-surface analysis in many fields, especially in the semiconductor industry.

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“…The analytical community has been discussing various approaches to calibration as long as TXRFs have been used in wafer fabs (see reference [1]); however, there are no NIST certified reference wafers available for TXRF calibration. Typical calibration methodologies that have been used for wafer analysis include spin coating from acidic solution [2], immersion in alkali hydrogen peroxide (IAP) solution [3], bulk analysis [4], reference free from a fully characterized instrument [5], microdroplet deposition [6], and picoliter deposition [7]. In this study we will evaluate and characterize the picoliter deposition method for use in preparing a standard reference wafer.…”

Section: Introductionmentioning

confidence: 99%

Investigation of total reflection X-ray fluorescence calibration with picoliter deposition arrays

Sparks¹,

Fittschen²,

Havrilla³

2013

Microelectronic Engineering

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Standard Sample Preparation for the Analysis of Several Metals on Silicon Wafer

Cited by 12 publications

References 2 publications

Changes in Concentrations of Copper and Nickel on Boron-Doped Czochralski-Grown Silicon Surface at Room Temperature

Changes in Concentrations of Copper and Nickel on Boron-Doped Czochralski-Grown Silicon Surface at Room Temperature

Whole-Surface Analysis of Semiconductor Wafers by Accumulating Short-Time Mapping Data of Total-Reflection X-ray Fluorescence Spectrometry

Investigation of total reflection X-ray fluorescence calibration with picoliter deposition arrays

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