Standard x-ray diffraction powder patterns

Swanson, H E; McMurdie, H F; Morris, M C; Evans, E H

doi:10.6028/nbs.mono.25-5

Cited by 71 publications

(69 citation statements)

References 7 publications

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“…The accuracy of the results ultimately depends on the accuracy of the lattice parameter of the tungsten standard (Swanson et al, 1966). The results obtained in several careful studies are listed in Table 2.…”

Section: Methodsmentioning

confidence: 99%

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A silicon powder diffraction standard reference material

Hubbard¹,

Swanson²,

Mauer³

1975

J Appl Crystallogr

161

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A silicon powder Standard Reference Material, SRM-640, has been prepared for use as a standard in powder diffractometry. Powder diffraction measurements were performed with a tungsten internal standard and a high-angle goniometer. The measured a/2 is 3.525176. With 2(Cu Kel peak) taken as 1.5405981 ~, a= 5.430880 (35) ,X, uncorrected for refraction. Comparison of a with values obtained with a single crystal from one of the boules reveals a difference of 3 parts in 105. This difference suggests a subtle systematic error in powder diffractometry or a change in lattice spacing near crystal boundaries. Use of the SRM should permit individual measurements of lattice parameters to be made reproducible to near 1 part in 105 and an absolute accuracy of at least 3 parts in 105.

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Section: Methodsmentioning

confidence: 99%

“…The otherwise excellent agreement indicates that the SRM is typical of high-purity silicon. The powder measurements were made with a highangle goniometer and an internal standard of tungsten (Swanson, McMurdie, Morris & Evans, 1966). Temperature was maintained at 25 + 0.1 °C.…”

Section: Methodsmentioning

confidence: 99%

A silicon powder diffraction standard reference material

Hubbard¹,

Swanson²,

Mauer³

1975

J Appl Crystallogr

161

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“…Table 2: Resistivity, mobility and carrier concentration of the as-deposited samples. [23] and ZnO wurtzite (001) peak at 34.4º [24]. …”

Section: Discussionmentioning

confidence: 99%

“…These peaks can be interpreted as the (111) peak of In 2 O 3 byxbyite structure referenced at 30.6º [23] changing gradually to ZnO (001) wurtzite peak referenced at 34.4º [24]. It suggested that some short range order could be present in the film structure.…”

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confidence: 99%

Electrical and optical properties of Zn–In–Sn–O transparent conducting thin films

et al. 2011

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Abstract:Indium tin oxide (ITO) is one of the widely used transparent conductive oxides (TCO) for application as transparent electrode in thin film silicon solar cells or thin film transistors owing to its low resistivity and high transparency. Nevertheless, indium is a scarce and expensive element and ITO films require high deposition temperature to achieve good electrical and optical properties. On the other hand, although not competing as ITO, doped Zinc Oxide (ZnO) is a promising and cheaper alternative. Therefore, our strategy has been to deposit ITO and ZnO multicomponent thin films at room temperature by radiofrequency (RF) magnetron cosputtering in order to achieve TCOs with reduced indium content. Thin films of the quaternary system Zn-In-Sn-O (ZITO) with improved electrical and optical properties have been achieved. *Manuscript Click here to view linked ReferencesThe samples were deposited by applying different RF powers to ZnO target while keeping a constant RF power to ITO target. This led to ZITO films with zinc content ratio varying between 0 and 67 %. The optical, electrical and morphological properties have been thoroughly studied.The film composition was analysed by X-ray Photoelectron Spectroscopy. The films with 17 % zinc content ratio showed the lowest resistivity (6.6×10 -4 Ωcm) and the highest transmittance (above 80 % in the visible range). Though X-ray Diffraction studies showed amorphous nature for the films, using High Resolution Transmission Electron Microscopy we found that the microstructure of the films consisted of nanometric crystals embedded in a compact amorphous matrix. The effect of post deposition annealing on the films in both reducing and oxidizing atmospheres were studied. The changes were found to strongly depend on the zinc content ratio in the films.

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“…The cell contains l6 Y2O2 units (20). Atomic positions can be found in International Tables for X-ray Crystallography ( …”

Section: Polymorphs Of Yttriamentioning

confidence: 99%