Stark Tuning of Donor Electron Spins in Silicon

Bradbury, F. R.; Tyryshkin, Alexei M.; Sabouret, Guillaume; Bokor, J.; Schenkel, T.; Lyon, S. A.

doi:10.1103/physrevlett.97.176404

Cited by 76 publications

(110 citation statements)

References 24 publications

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“…Moreover, electron spin relaxation rates of implanted 121 Sb and the Stark effect due to applied electric fields have been previously studied in detail [2,3]. In the limit of a single-donor doped aFET, an EDMR experiment can yield spectra where information on a single nuclear spin state can be deduced from the presence (and absence) of donor hyperfine-split peaks, provided that the read-out time is faster than the spin-flip time of the nuclear spin.…”

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confidence: 99%

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Spin-dependent scattering off neutral antimony donors in Si28 field-effect transistors

Bokor

Schenkel

et al. 2007

Applied Physics Letters

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We report measurements of spin-dependent scattering of conduction electrons by neutral donors in accumulation-mode field-effect transistors formed in isotopically enriched silicon. Spin-dependent scattering was detected using electrically detected magnetic resonance where spectra show resonant changes in the source-drain voltage for conduction electrons and electrons bound to donors. We discuss the utilization of spindependent scattering for the readout of donor spin-states in silicon based quantum computers. Neutral impurity scattering is spin-dependent because different spin configurations of the conduction and donor electrons (singlet or triplet) imply a different spatial distribution of the two-electron wavefunction, which translates into a difference in scattering crosssections. This SDS process by phosphorus impurities in an accumulation-mode fieldeffect transistor (aFET) was first observed by Ghosh and Silsbee using electrically detected magnetic resonance (EDMR) [9]. In an EDMR experiment, a static magnetic field induces a Zeeman splitting in the electron energy levels, and in thermal equilibrium, triplet scattering is favored as more spins are aligned with the static field. Singlet scattering can be enhanced by inducing spin flips with a resonant microwave field. This increase in singlet content then registers as an effective channel resistance change of the 3 aFET. Ghosh and Silsbee used large-area aFETs (1×0.1 mm 2 ) formed in bulk-doped silicon with about 2×10 17 phosphorus/cm 3 [9]. The number of donors close (~10 nm) to the aFET channel that contribute to SDS was estimated to be ~10 8 . However, bulk donors far away from the channel that did not contribute to SDS caused an undesired bolometric signal due to resonant microwave absorption, and substantial efforts were undertaken to resolve interfering bolometric effects and to isolate the SDS signal.In the present work, we demonstrate SDS by neutral 121 Sb donors in silicon aFETs. In order to avoid bolometric signals, aFETs were formed in undoped silicon and ~6×10 6 donors were implanted into the transistor channel. While most donor-based silicon quantum computer proposals have suggested spins of 31 P as qubits, 121 Sb is used in our experiments due to its smaller straggling in the channel implantation process, lower diffusion rates in silicon, and to avoid spurious signals arising from residual background 31 P atoms in the silicon substrate or from the polycrystalline silicon gate.

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confidence: 99%

“…Donor atoms (e. g. phosphorus [1] or antimony [2,3]) embedded in a silicon substrate are the basis for quantum bits (qubits), and spins of donor electrons and nuclei are utilized for quantum information storage and manipulation. An integral part of any quantum computation architecture is a high-fidelity qubit readout.…”

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confidence: 99%

Spin-dependent scattering off neutral antimony donors in Si28 field-effect transistors

Bokor

Schenkel

et al. 2007

Applied Physics Letters

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“…As a result, the defect induced Stark shift has a component that depends linearly on the external electric field [23]. This component is expected to be strictly inhomogeneous and thus results in a decay of the electron spin echo signal -but it can be cancelled by applying bipolar (positive and negative) electric pulses, as given by the sequence depicted on Fig.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…The best attempt so far within effective mass theory (EMT) was proposed by Friesen [15]: For Si:P he correctly predicted a quadratic hyperfine shift, but one which is one order of magnitude larger than the value expected from the two measurements performed so far (Si:Sb [23] and Si:As [25]). More recently, other theories such as tight binding (TB) and Band Minima Basis (BMB) [21,24] have been applied to the same Si:P problem, leading to closer agreement with experiment.…”

Section: Introductionmentioning

confidence: 99%

“…For these reasons, the Stark effect in doped silicon has been broadly studied in literature, either theoretically [14][15][16][17][18][19][20][21][22] or experimentally [23,[25][26][27][28]. More generally, the ability to theoretically describe the donor electron wave function accurately in a wide range of electrostatic environments is beneficial for determining the values of control parameters which provide best performance, and in the best case for estimating a priori the feasibility of quantum algorithms and error correction codes [20].…”

Section: Introductionmentioning

confidence: 99%

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Hyperfine Stark effect of shallow donors in silicon

et al. 2014

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We present a complete theoretical treatment of Stark effects in bulk doped silicon, whose predictions are supported by experimental measurements. A multi-valley effective mass theory, dealing non-perturbatively with valley-orbit interactions induced by a donor-dependent central cell potential, allows us to obtain a very reliable picture of the donor wave function within a relatively simple framework. Variational optimization of the 1s donor binding energies calculated with a new trial wave function, in a pseudopotential with two fitting parameters, allows an accurate match of the experimentally determined donor energy levels, while the correct limiting behavior for the electronic density, both close to and far from each impurity nucleus, is captured by fitting the measured contact hyperfine coupling between the donor nuclear and electron spin.We go on to include an external uniform electric field in order to model Stark physics: With no extra ad hoc parameters, variational minimization of the complete donor ground energy allows a quantitative description of the field-induced reduction of electronic density at each impurity nucleus. Detailed comparisons with experimental values for the shifts of the contact hyperfine coupling reveal very close agreement for all the donors measured (P, As, Sb and Bi). Finally, we estimate field ionization thresholds for the donor ground states, thus setting upper limits to the gate manipulation times for single qubit operations in Kane-like architectures: the Si:Bi system is shown to allow for A gates as fast as ≈10 MHz.

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Spin‐elektrische Kopplung in einem Cobalt(II)‐basierten Spindreieck, gezeigt mithilfe elektrisches‐Feld‐modulierter Elektronenspinresonanzspektroskopie

et al. 2021

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Ein Cobalt(II)-basiertes Spin-Dreieck zeigt signifikante Spin-elektrische Kopplung. Der Komplex [Co 3 (pytag)-(py) 6 Cl 3 ]ClO 4 •3 py kristallisiert in der azentrischen monoklinen Raumgruppe P2 1. Eine antiferromagnetische Wechselwirkung von ca. À15 cm À1 (H = ÀJS a S b) führt zu Spinfrustration. Die zu erwartenden zwei energetisch entarteten Grundzustandsdubletts sind jedoch um einige Wellenzahlen voneinander separiert, was aus der magnetischen Anisotropie und Abweichungen von der ideal dreizähligen Symmetrie resultiert. Die Co 3-Ebenen der symmetrieverwandten Moleküle sind nahezu parallel. Das ermçglicht die Untersuchung Spin-elektrischer Eigenschaften in Einkristallen durch EFM-ESR-Spektroskopie. Der Spin-elektrische Effekt bei Einwirkung des elektrischen Felds in der Co 3-Ebene zeigte sich in einer Verschiebung des Resonanzfelds. Eine Quantifizierung erfolgte als Dg E /E = 0,11 10 À9 m V À1 , was ca. 0,3 Hz m V À1 entspricht. Dieser Wert ist vergleichbar mit dem in einem Cu 3-Dreieck gefundenen, wenngleich die antiferromagnetische Wechselwirkung in diesem 20-mal grçßer ist.

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Stark Tuning of Donor Electron Spins in Silicon

Cited by 76 publications

References 24 publications

Spin-dependent scattering off neutral antimony donors in Si28 field-effect transistors

Spin-dependent scattering off neutral antimony donors in Si28 field-effect transistors

Hyperfine Stark effect of shallow donors in silicon

Spin‐elektrische Kopplung in einem Cobalt(II)‐basierten Spindreieck, gezeigt mithilfe elektrisches‐Feld‐modulierter Elektronenspinresonanzspektroskopie

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