State-filling and magneto-photoluminescence of excited states in InGaAs/GaAs self-assembled quantum dots

Carrier capture and relaxation in Stranski-KrastanowInxGa1−xAs/Lobo1, Perret2, Morris3 et al. 2000Phys. Rev. BSelf Cite22040View full textAdd to dashboardCite

“…Carrier thermal emission from high-energy QD's and retrapping by lower- energy QD's also contributes to this redshift. 18 The observation of state filling 19 at such low-excitation densities in TRPL, along with the large intersublevel separation extracted from fits to the PL spectra ͑see Fig. 3͒ suggest that the population of the first excited state in PL is predominantly due to state filling rather than thermal activation of carriers from the QD ground state.…”

Self-ordered InGaAs quantum dots grown at low growth rates

“…Thereafter, the following adatoms migrate along and preferentially nucleate at step edges under the influence of the lateral strain field. 16,17 Consequently, 1D aligned single dot arrays are distributed on the surface when the growth rate is less than 0.054 m / h. Figure 3 shows the 77 K -PL spectra of samples A, B, and D. All spectra exhibit the multipeak emissions and Gaussian curves are therefore used to fit the peaks. The multipeak transition is typically observed in larger QDs with low densities, except the case of luminescence from the WL.…”

“…The multipeak transition is typically observed in larger QDs with low densities, except the case of luminescence from the WL. 17 The spectrum of sample A includes a peak at 870 nm with a full width at half maximum ͑FWHM͒ of 13 nm, which corresponds to luminescence from the wetting layer. The emission from QDs is at 923 nm with a larger FWHM of 37 nm.…”

Many-Exciton Complexes in Self-Assembled Quantum Dots

“…The actual shape of these quasi-0D objects depends on the growth parameters and different forms have been reported [1][2][3]. We concentrate here on a class of lens-shaped InGaAs self-assembled dots (SAD's) investigated recently by single electron capacitance (SECS), photoluminescence (PL), and far-infrared (FIR) spectroscopies [1,[4][5][6]. The lens-shaped InGaAs SAD is formed on a InGaAs wetting layer (WL) of thickness t, grown on GaAs.…”

“…This is illustrated in Fig. 1, where we show the numerically calculated electron energy spectum (measured from the bottom of bulk GaAs continuum) resolved into different angular momentum channels 1 = m -n. The parameters used for calculation correspond to the sample reported by Raymond et al [4] (s = 180 Ά . and h = 44 A), yielding 5 confined shells spaced by 30 meV (denoted here as s, p, d, f and g), i.e.…”