State of the art of Hg-melt LPE HgCdTe at Santa Barbara Research Center

Tung, Tse; DeArmond, L V.; Herald, R. F.; Herning, P. E.; Kalisher, M. H.; Olson, D. A.; Risser, R. F.; Stevens, Andrew; Tighe, S. J.

doi:10.1117/12.138616

Cited by 55 publications

(10 citation statements)

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“…Further details on HgCdTe/Si material growth and the DLHJ detector structure design are described elsewhere. [14][15][16] To allow the application of different process variations in fabricating detector arrays, a single 4-in. HgCdTe/Si was diced into smaller sizes prior to wafer processing.…”

Section: Resultsmentioning

confidence: 99%

Inductively coupled plasma etching for large format HgCdTe focal plane array fabrication

Smith

Venzor

Newton

et al. 2005

Journal of Elec Materi

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Inductively coupled plasma (ICP) using hydrogen-based gas chemistry has been developed to meet requirements for deep HgCdTe mesa etching and shallow CdTe passivation etching in large format HgCdTe infrared focal plane array (FPA) fabrication. Large format 2048 ϫ 2048, 20-µm unit-cell short wavelength infrared (SWIR) and 2560 ϫ 512, 25-µm unit-cell midwavelength infrared (MWIR) double-layer heterojunction (DLHJ) p-on-n HgCdTe FPAs fabricated using ICP processing exhibit Ͼ99% pixel operability. The HgCdTe FPAs are grown by molecular beam epitaxy (MBE) on Si substrates with suitable buffer layers. Midwavelength infrared detectors fabricated from 4-in. MBE-grown HgCdTe/Si substrates using ICP for mesa delineation and CdTe passivation etching demonstrate measured spectral characteristics, RoA product, and quantum efficiency comparable to detectors fabricated using wet chemical processes. Mechanical samples prepared to examine physical characteristics of ICP reveal plasma with high energy and low ion angle distribution, which is necessary for fine definition, high-aspect ratio mesa etching with accurate replication of photolithographic mask dimensions.

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Section: Resultsmentioning

confidence: 99%

Inductively coupled plasma etching for large format HgCdTe focal plane array fabrication

Smith

Venzor

Newton

et al. 2005

Journal of Elec Materi

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“…The use of heterostructures to improve HgCdTe (MCT) infrared detector performance is a well-established practice [31][32][33]. Table 1 Selected properties of common families of semiconductors used in mid-wave and long-wave infrared photodetectors.…”

Section: Unipolar Barriersmentioning

confidence: 99%

Antimonide superlattice complementary barrier infrared detector (CBIRD)

Ting

Soibel

Hill

et al. 2011

Infrared Physics & Technology

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“…Four layers (30 cm 2 each) with a total area of 120 cm 2 can be grown in a single run. 42 In the early 90's, bulk growth has been replaced by LPE and now is very mature for production of first-and second-generation detectors. LPE technique has been successfully used in fabrication of DLHJ p-on-n photodiodes (see Fig.…”

Section: Impact Of Epitaxial Growth On Development Of Hgcdte Detectorsmentioning

confidence: 99%

HgCdTe infrared detectors: historical prospect

Rogalski

2003

SPIE Proceedings

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HgCdTe infrared (IR) detectors have been intensively developed since the first synthesis of this ternary alloy in 1958. The paper summarizes the fundamental properties of this versatile alloy, and relates the material properties to its successful applications as an IR photoconductive and photovoltaic detector material. An emphasize is put on key developments in the crystal growth and their influence on device evolution.Recent advances of backside illuminated HgCdTe heterojunction photodiodes have enabled third generation of multispectral instruments for remote sensing applications and have led to the practicality of multiband IR focal plane array technology.

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State of the art of Hg-melt LPE HgCdTe at Santa Barbara Research Center

Cited by 55 publications

References 0 publications

Inductively coupled plasma etching for large format HgCdTe focal plane array fabrication

Inductively coupled plasma etching for large format HgCdTe focal plane array fabrication

Antimonide superlattice complementary barrier infrared detector (CBIRD)

HgCdTe infrared detectors: historical prospect

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