State selective electron transport through electronic surface states of6H‐SiC(0001)‐3×3

Abstract

We investigate charge transport through electronic surface states of the 6H-SiC͑0001͒-3 ϫ 3 surface. Three intrinsic surface states are located within the wide bulk band gap, in which two ͑S 1 and U 1 ͒ arise from strongly correlated electronic states and the third ͑S 2 ͒ has negligible electron correlation effects. Combined conductance and luminescence experiments with the scanning tunneling microscope show that the Mott-Hubbard surface states ͑S 1 and U 1 ͒ have a high resistance ͑1.0 G⍀͒, while the noncorrelated state ͑S 2 ͒ has a negligible resistance. Consequently, current can be selectively transported through any of these three surface states.

Helium diffraction on SiC grown graphene: Qualitative and quantitative descriptions with the hard-corrugated-wall model

“…Graphene was prepared by epitaxial growth on a highly nitrogen-doped SiC wafer (resistivity: 0.04 Ω.cm, dopant density 3 × 10 18 atoms per cm 3 ). We proceed by starting systematically with the formation of the SiC(0001)-3 × 3 reconstruction of the Si-face [29]. Graphene is produced by annealing the Si-terminated surface at 1325 • C for 25 minutes [30,31].…”

Bifunctional effects of the ordered Si atoms intercalated between quasi-free-standing epitaxial graphene and SiC(0001): graphene doping and substrate band bending

“…(a) ZL structures on the SiC(0001) are semiconducting from nonexistence of surface states at E F 2 . The semiconducting nature of the three-layer 3 × 3 structure arise from a Mott-Hubbard metal-insulator transition due to strong electron correlation effects of states localized at the Si adatom sites, leading to a filled lower Hubbard band and an unfilled upper Hubbard band inside the band gap [49,[60][61][62]. Since the c (14 2 3 )…”

STM imagery and density functional calculations of C60fullerene adsorption on the 6H-SiC(0001)-3×3 surface

“…After outgassing, the SiC sample was flashed at 1100 • C to remove the native oxide, followed by silicon deposition on the surface at 650 • C for a few minutes, 40 giving a clear 3 × 3 LEED pattern indicating a well reconstructed surface. 41 The C 60 fullerene molecules were evaporated on the clean SiC(0001)-3 × 3 surface using a Knudsen cell at 390 • C placed 4 cm in front of the sample. The exposure times were varied between 10 and 60 seconds.…”