Static and Dynamic Characterization of 650 V GaN E-HEMTs in Room and Cryogenic Environments

Mehrabankhomartash, Mahmoud; Yin, Shiyuan; Cruz, Alfonso; Graber, Lukas; Saeedifard, Maryam; Evans, Simon J.; Kapaun, Florian; Revel, I.; Steiner, Gerhard; Ybanez, Ludovic; Park, Chanyeop

doi:10.1109/ecce47101.2021.9595593

Cited by 8 publications

(3 citation statements)

References 10 publications

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“…To reach the desired blocking voltage, V DC , the R DS(ON) of the switches are scaled based on their maximum V DS as per, N series > V DC V DS(MAX) (20) where N series is the number of switches needed in series to reach the desired V DC . Similarly, to meet the output current requirement, I o , of the inverter, R DS(ON) is scaled based on each switches maximum I DS as per, N parallel > I DS I DS(MAX) (21) where N parallel is the number of parallel switches needed. The scaled resistance for an effective switch is calculated using,…”

Section: Theoretical Motor Drive Case Studymentioning

confidence: 99%

“…In such a powertrain the temperature of the power electronics would be cryogenic (<−150 • C). At these temperatures silicon-carbide (SiC) FETs [12][13][14] and IGBTs [15,16] tend to have an increase in conduction losses due to a higher R DS(ON) while silicon (Si) FETs [17,18] and gallium nitride (GaN) high electron mobility transistors (HEMTs), [19][20][21][22][23][24] have reduced conduction losses. However, carrier freezeout limits the R DS(ON) reductions of Si devices in comparison to GaN devices.…”

Section: Introductionmentioning

confidence: 99%

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GaN-based cryogenic temperature power electronics for superconducting motors in cryo-electric aircraft

Wadsworth

Thrimawithana

Zhao

et al. 2023

Supercond. Sci. Technol.

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Climate change has spurred a shift to electric transportation, but aviation faces challenges with electric energy storage and propulsion. Cryogenically cooled superconductingmotors, along with cryogenically cooled power electronics, offer a solution to increase the efficiency and power density of electric aircraft. This paper evaluates the feasibility of cryogenic power electronics by characterizing new technologies (GaN, nanocrystalline) using new experimental techniques. It is found that the on resistance reductions of GaN E-HEMTs at cryogenic temperatures depend on the maximum blocking voltage of the device, and the size of the gate resistor for ohmic p-GaN devices. Different types of nanocrystalline cores are shown to vary greatly in their behavior at cryogenic temperatures, which is measured using a modified core loss measurement circuit. Further analysis shows that the losses of a GaN based cryogenic inverter could potentially halve that of an equivalent Si based inverter

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Section: Theoretical Motor Drive Case Studymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

GaN-based cryogenic temperature power electronics for superconducting motors in cryo-electric aircraft

Wadsworth

Thrimawithana

Zhao

et al. 2023

Supercond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…62, Page: 6]. E-HEMTs offer reduced static R DS,on , constant V Th and reduced switching energy losses under cryogenic conditions[50][51][53][54][56]. Carrier freeze-out as a limitation could not be observed in the publication[54, Page: 7413].…”

mentioning

confidence: 99%

Cryogenically-Cooled Power Electronics for Long-Distance Aircraft

et al. 2022

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New aerodynamic aircraft concepts enable the storage of volumetric liquid hydrogen (LH 2 ). Additionally, the low temperatures of LH 2 allow technologies such as the superconductivity of electrical components. An increased power density of the onboard wiring harness and the electrical machine can be expected. Nevertheless, the power electronic drive inverter has to deliver high power and high switching frequencies (f PWM s) under challenging conditions. Therefore, knowledge of the electric behaviour of different semiconductor materials under cryogenic temperatures is essential to answer the question: "Are modern power electronics a technology enabler or a system bottleneck?" This publication shows a comprehensive novelty study for cryogenic power electronics based on experimental-driven semiconductor investigations, mission profile-based considerations, requirement analyses of superconducting electrical machines, and studies of the cooling concepts. All aspects are discussed within one interdisciplinary publication. A cryogenic system cannot be considered without a feasible cooling concept. Different semiconductor structures based on various materials (silicon (Si), silicon carbide (SiC) and gallium nitride (GaN)) are evaluated for their suitability. The collected data and the literature review draw a technology feasibility studies supported by detailed cooling system analyses and superconducting electrical machine requirements. The power demand and high f PWM lead to a SiC non-cryogenic inverter approach. Due to the detailed cooling system assessment, a loss reduction is achieved by optimising the junction temperature (T J ) under various load cases (LCs) out of the mission profile.INDEX TERMS Long-distance aircraft, fuel cell, liquid hydrogen, cryogenic cooler design, high temperature superconductivity, cryogenic electrical power supply system, cryogenic power electronics, experimental semiconductor comparison, cryogenic inverter design ACRONYMS

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GaN HEMT and Air Core Magnetics based Power Converters Evaluations at Cryogenic Temperature

Wei,

Maksudul Hossain,

Alan Mantooth

2024

IOP Conf. Ser.: Mater. Sci. Eng.

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Cryogenic power electronics is both advantageous and indispensable in many applications, like deep space probe, military electric vehicle, magnetic resonance imaging etc. Among different semiconductors, the gallium nitride (GaN) high electron mobility transistor (HEMT) is the most promising candidate for cryogenic applications with significant conduction loss and switching loss reductions. Moreover, there is no carrier freeze out effect for the GaN HEMTs, which is applicable in extreme low temperature operating conditions. In this work, the efficiency of GaN HEMTs based power converters with different power levels (from several Watts to several kiloWatts) are evaluated at cryogenic temperature. Three different commercial GaN HEMTs are used in these power converters, including the Texas Instruments LMG5200 80 V GaN half-bridge power stage with integrated gate driver, the GaN Systems 650 V bottomcooled GaN HEMT GS66516B, and the 650 V top-cooled GaN HEMT GS66516T from GaN Systems. Moreover, two different cryogenic power converter evaluation methods (cryogenic chamber and liquid nitrogen channeled through cold plate) are investigated. Three of these power converters are evaluated by using a cryogenic chamber and such that the converter operating environment temperature can be regulated. One of the power converters is evaluated by using liquid nitrogen (LN2) channeled through a cold plate, where the gate driver can be designed to operate at non-cryogenic temperatures to ensure the safe operation of the system. Due to the degraded performance of conventional magnetic components, air core magnetics are used in these power converters to improve the converter efficiency. Efficiency improvements at cryogenic temperature are observed for all the GaN HEMTs and air core magnetics based power converters, which are promising for cryogenic power electronics applications.

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Static and Dynamic Characterization of 650 V GaN E-HEMTs in Room and Cryogenic Environments

Cited by 8 publications

References 10 publications

GaN-based cryogenic temperature power electronics for superconducting motors in cryo-electric aircraft

GaN-based cryogenic temperature power electronics for superconducting motors in cryo-electric aircraft

Cryogenically-Cooled Power Electronics for Long-Distance Aircraft

GaN HEMT and Air Core Magnetics based Power Converters Evaluations at Cryogenic Temperature

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