2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) 2023
DOI: 10.23919/epe23ecceeurope58414.2023.10264635
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Static and Dynamic Characterization of a 1.2 kV SiC MOSFET in Third Quadrant

Matthieu Masson,
Marc Cousineau,
Nicolas Rouger
et al.

Abstract: In this paper, the 3 rd quadrant behavior of a 1.2 kV SiC MOSFET without additional anti-parallel diode is investigated. More specifically, the effect of the gate-source voltage on the reverse conduction is presented, and shows a strong dependency even for a gate voltage varying below the threshold voltage. The static characterization is compared to three other types of MOSFETs that present a stronger reverse current path due to their architectures. A dynamic characterization is also performed to describe the … Show more

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