Static and low-frequency noise characterization in submicron MOSFETs for memories cells applications

Low-frequency noise in downscaled silicon transistors: Trends, theory and practice

“…The time constants of the two states of individual RTS match with the predictions of Shockley-Read-Hall theory for generation-recombination process [68,74,107,112,148,166]. Consequently, the superposition of larger number of individual RTS, each of which having a Lorentzian spectrum, is found to coincide with 1/f noise in larger-area MOS transistors [68,74,112,148].…”

“…Thus, the use of Shockley-Read-Hall process might be incorrect for the tunneling noise from oxide traps, since it is questionable whether the traps are in equilibrium. On the other hand, the capture and emission time constants in RTS noise in MOS transistors are found to follow Shockley-Read-Hall process [68,74,107,112,148,161,162]. Other issues related to the assumptions for superposition of tunneling events in gate oxide in creating 1/f noise are discussed in [4].…”

“…Third, the lowfrequency noise in MOS transistors is higher than the noise in BJTs, as one can see in Figure 15. In this figure, the data are for 134 nMOS transistors from [22,47,48,49,50,51,72,86,87,88,89,90,91,92,93,94,95,96,97,98,99,100,101,102,103,104,105,106,107,108,109,110,111,112,113,114,115,116,117,118,119,120,121,122,123], and for 53 pMOS transistors from [47,52,86,…”

“…The tunneling ∆n model for 1/f noise in MOS transistors, which was originally suggested in [85], has been followed up widely [47,48,49,50,51,52,53,54,55,56,72,74,80,82,83,87,89,91,95,101,103,106,107,110,124,126,127,128,136,137,138,139,140,141,142,143,144,145]. It assumes that some charge carriers are trapped in the depth of the gate oxide.…”

“…We have collected data from [22,47,48,49,50,51,72,82,86,87,88,89,90,91,92,93,95,96,97,98,99,100,101,102,103,104,105,106,107,108,109,110,111,112,149] for nMOS transistors and from [47,52,86,88,94,95,96,97,100,102,104,105,109,124,125,126,…”