Static and Radio-Frequency Characteristics of Green-Nanoseconds Laser-Crystallized Poly-Si Thin-Film Transistors

Abstract

In this study, we investigate the static and radio-frequency characteristics of poly-Si thin-film transistors (TFTs) with the channels treated by using either green-nanoseconds laser crystallization (GLC) or solid phase crystallization (SPC) processes. The influences of the crystallization schemes on the granular structures of the resulted poly-Si as well as the device characteristics were studied and compared. Scanning Electron Microscope observations indicate that mean grain size of the 50 nm-thick poly-Si films is approximate 70 nm following the SPC process, whereas GLC process enlarges the mean grain size to 0.5 μm. As a consequence, GLC poly-Si TFTs exhibit greatly improved electron mobility and transconductance as compared to the SPC ones. Moreover, superior high-frequency characteristics with cut-off frequency (f T ) and maximum oscillation frequency (f max ) of 21.1 GHz and 24.1 GHz, respectively, are recorded in GLC devices with channel length of 0.26 μm.

(Digital Presentation) Effect of Active Layer Thickness on Organic Thin-Film Transistors

“…To increase performance, the influence of organic semiconductor thickness on the charge transport in bottom gate and top contact OFET architectures was studied and analyzed (10)(11)(12). Two-dimensional numerical simulations were performed to analyze the physical parameters of the devices, including electric potential profile, carrier distribution density throughout the channel and active layer, and current-voltage characteristics, as a function of the active layer (13)(14)(15)(16).…”