Static time-of-flight secondary ion mass spectrometry analysis of microelectronics related substrates using a polyatomic ion source

Quantitative Surface Analysis of a Binary Drug Mixture—Suppression Effects in the Detection of Sputtered Ions and Post-Ionized Neutrals

“…S econdary ion mass spectrometry (SIMS) is a widely used technique applied to both fundamental and applied research. Biomedical applications and study of the chemistry taking place inside cells and tissues, surface analysis of polymers and semiconductor devices, and investigation of the composition of meteorites are just a few of the scientific areas where SIMS has been proven to be a valuable analytical tool [1][2][3][4][5][6][7][8][9].The main concept of the SIMS technique is to study the ionized particles (atoms, molecules, and clusters) emitted from a surface after the impact of a primary ion beam. However, sputtering, besides leading to the ejection of ionized particles, also results in the ejection of neutral species, which typically consist more than 90% of the sputtered material [10].…”

Atomic spectrometry update. Industrial analysis: metals, chemicals and advanced materials

“…Static TOF-SIMS has been used by Ravanel and coworkers for the analysis of micro-electronic devices in two publications. 276,277 In the first of these, the authors discussed the use of relative sensitivity factors to convert the normalised ion intensities into reliable concentration data. Samples deliberately contaminated with the anionic species Br, Cl, P and S were analysed using TOF-SIMS and the results compared with those obtained using other established surface analytical techniques (TXRF, vapour phase decomposition ICP-MS and liquid phase extraction ion chromatography).…”

ToF-SIMS study of gold/phthalocyanine interface

“…In the last years, its accuracy, mass sensitivity and range are greatly enhanced by time-of-flight (ToF) technique, by selection of appropriate sputtering ions (e.g. Cs, C 60 ) and by using a dual-beam mode [8][9][10].…”