Statistical analysis of atomic force microscopy and Raman spectroscopy data for estimation of graphene layer numbers

Obraztsova, Ekaterina A.; Osadchy, А. V.; Obraztsova, E. D.; Lefrant, S.; Яминский, И.В.

doi:10.1002/pssb.200879657

Cited by 54 publications

(31 citation statements)

References 8 publications

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“…19,[29][30][31] In our case, the measured height of SLG on SiO 2 varied between 0.6 and 1 nm, whereas the Gr-Gr single layer distance was typically between $0.3 and $0.5 nm. The typical flake extensions range from $20 lm to $100 lm.…”

Section: A Substrate Morphologymentioning

confidence: 56%

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Temperature dependent growth morphologies of parahexaphenyl on SiO2 supported exfoliated graphene

Kratzer¹,

Klima²,

Teichert³

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Growth condition dependence of morphology and electric properties of ZnO films on sapphire substrates prepared by molecular beam epitaxyThe growth of small conjugated molecules on graphene is of increasing interest, since the latter bears the potential to serve as a transparent electrode for organic solar cells and light emitting diodes. Here, parahexaphenyl thin films have been grown by hot wall epitaxy on SiO 2 supported exfoliated graphene. The arising morphologies-studied by atomic force microscopy-exhibit a strong dependence on deposition temperature. At temperatures from 280 K-333 K, islands consisting of almost upright standing molecules and needles composed from lying molecules coexist on the graphene flake. Between 363 and 423 K solely needles-consisting of lying molecules-are present on the graphene. The needles form well-ordered networks with relative orientation angles of $30 , $60 , and $90 reflecting the symmetry of the graphene substrate.

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Section: A Substrate Morphologymentioning

confidence: 56%

“…The islands on the SiO 2 appear more dendritic than those on the Gr. 31 The 6P islands also overgrow the Gr-Gr step edge essentially undisturbed and the film morphology for SLG and DLG is identical. In this case, also a DLG is visible.…”

Section: A Substrate Morphologymentioning

confidence: 91%

Temperature dependent growth morphologies of parahexaphenyl on SiO2 supported exfoliated graphene

Kratzer¹,

Klima²,

Teichert³

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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show abstract

“…In the first Brillouin zone, Raman double resonance phenomena involves two phonons and electronic states which lie near two nonequivalent K points and create a 2D peak in the Raman spectrum. 32,33 Moreover, a shift in the position of the 2D band gives information about the strain in the sample. 34 The electrons exhibit linear dispersion near Dirac K points and behave as massless Dirac fermions in graphene.…”

Section: Resultsmentioning

confidence: 99%

Coalescence of few layer graphene grains grown by chemical vapor deposition and their stacking sequence

Karamat

Sonusen

Dede³

et al. 2015

J. Mater. Res.

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Few layer graphene is attractive due to its extraordinary electronic and optical properties, which are strongly influenced by the orientation between the layers called as stacking sequence. It is challenging to synthesize high quality large size single or multi layer graphene crystals on the metal catalyst using chemical vapor deposition technique. The present work is about synthesis of few layer graphene grains on platinum foil using ambient pressure chemical together vapor deposition technique. The main focus is how the different grains coalesced and maintain the stacking sequence. Different characterization techniques are used to analyze the grains when they are in the process of merging to make a bigger grain. Scanning electron microscopy clearly shows different stacking sequences and merging of different nucleation sites of different grains. Interestingly, different stacking sequences are observed during the process of coalescence of grains. Raman spectroscopy gives accurate information about the number of layers and their stacking sequence. We observed Bernal AB and twisted layer stacking in the grains when they were combining together to grow into a bigger size. The full width at half maximum (FWHM) value of 2D Raman peaks appeared in the range of 52-69 cm À1 which shows an increase from the value of single layer graphene (30.18 cm .

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“…It has attracted intensive interest, since experimentally discovered, and it is now at the center of a significant experimental and theoretical research effort. [36][37][38][39][40] This is because of the remarkable electronic properties of graphene and its versatile potential, in many applications such as high-speed electronics, ultrasensitive chemical detectors and spintronic devices, and more. [41][42][43] Recently, Raman spectroscopy has become a conventional technique for the identification and characterization of graphene layer.…”

Section: Introductionmentioning

confidence: 99%

The improvement of InAs/GaAs quantum dot properties capped by Graphene

Rezgui

Othmen

Cavanna³

et al. 2013

J Raman Spectroscopy

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InAs self‐assembled quantum dots (QDs) were grown by molecular beam epitaxy on (001) GaAs substrate. Uncapped and capped QDs with GaAs and graphene layers were studied using atomic force microscopy and Raman spectroscopy. Graphene multi‐layer was grown by chemical vapor deposition and transferred on InAs/GaAs QDs. It is well known that the presence of a cap layer modifies the size, shape, and density of the QDs. According to the atomic force microscopy study, in contrast to the GaAs capped sample, which induce a dramatic decrease of the density and height of dots, graphene cap layer sample presents a slight influence on the surface morphology and the density of the islands compared with the uncapped one. The difference shown in the Raman spectra of the samples is due to change of strain and alloy disorder effects on the QDs. Residuals strain and the relaxation coefficients have been investigated. All results confirm the best crystalline quality of the graphene cap layer dots sample relative to the GaAs capped one. So graphene can be used to replace GaAs in capping InAs/GaAs dots. To our knowledge, such study has not been carried out until now. Copyright © 2013 John Wiley & Sons, Ltd.

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Statistical analysis of atomic force microscopy and Raman spectroscopy data for estimation of graphene layer numbers

Abstract: International audienc

Cited by 54 publications

References 8 publications

Temperature dependent growth morphologies of parahexaphenyl on SiO2 supported exfoliated graphene

Temperature dependent growth morphologies of parahexaphenyl on SiO2 supported exfoliated graphene

Coalescence of few layer graphene grains grown by chemical vapor deposition and their stacking sequence

The improvement of InAs/GaAs quantum dot properties capped by Graphene

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