Statistical analysis on performance degradation of 90 nm bulk Si MOS devices irradiated by heavy ions

Ren, Zhexuan; An, Xia; Wu, Wenyi; Zhang, Xing; Huang, Ru

doi:10.1109/icsict.2016.7998662

Cited by 2 publications

(2 citation statements)

References 10 publications

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“…Andrea Cester et al [16] reports that the saturation current of deep submicron MOS devices may decreases by more than 50% after heavy ion irradiation. Our group previously reported the threshold voltage (V th ) shift of several tens of millivolts after heavy ion irradiation of 90 nm devices, and the off-state leakage current (I off ) increases by orders of magnitude [10,17]. The DC characteristics degradation induced by heavy ion irradiation is usually semi-permanent, even permanent, and takes long time to recover or even unrecoverable.…”

Section: Introductionmentioning

confidence: 99%

Statistical analysis on the effects of heavy ion irradiation on 65 nm bulk silicon MOS devices

Ren¹,

An²,

Li³

et al. 2019

Semicond. Sci. Technol.

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In this paper, the effect of heavy ion irradiation on 65 nm bulk silicon MOS devices is experimentally investigated. Different performance degradation behaviour is observed due to the intrinsic random incident of heavy ions. After irradiation, the threshold voltage (V th ) shifts negatively and the largest V th shift is 54 mV. The drain induced barrier lowing (DIBL) effect deteriorates and DIBL increases by more than 30 mV V −1 . The variation of maximum transconductance (G m ) is up to 30%. The off-state leakage current (I off ) increases by several times, up to one order of magnitude. These performance degradation is attributed to the displacement damage in the active region, interface states at gate oxide interface and trapped charges in shallow trench isolation (STI) induced by micro-dose effect. Moreover, statistical analysis on the geometry dependence is firstly demonstrated. The average value of V th shift, DIBL shift, and I off degradation increase with the decrease of gate width. Finally, the influence of technology downscaling from deep-submicron to nanoscale on the heavy ion irradiation effect is statistically analyzed. Four technology nodes (65 nm, 90 nm, 0.18 μm and 0.25 μm) are chosen for comparison. The results indicates that the V th shift and DIBL shift increase with the technology downscaling. The I off degradation is strongly correlated with the trapped charge in STI caused by micro-dose effect. The results are helpful to further understand the single event effects of nanoscale bulk silicon MOS devices and may provide guideline for radiation-hardened design.

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Section: Introductionmentioning

confidence: 99%

Statistical analysis on the effects of heavy ion irradiation on 65 nm bulk silicon MOS devices

Ren¹,

An²,

Li³

et al. 2019

Semicond. Sci. Technol.

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show abstract

“…Short pulse-width pulsed laser was first employed in radiation SEE testing in 1965 [1] and over the years, there have been increased adoption of this technique [2,3]. The pulsed laser SEE test method is widely accepted as non-cumulative as it does not induce permanent damages (displacement damage and total ionizing dose) which were commonly induced [4][5][6] during particle radiation tests. In addition, in the field of failure analysis, picosecond 1064 nm pulsed laser techniques have recently been demonstrated as a useful tool to conduct time resolved laser assisted device alteration analysis [7].…”

Section: Introductionmentioning

confidence: 99%

Failure Analysis of Damages on Advanced Technologies Induced by Picosecond Pulsed Laser During Space Radiation SEE Testing

Chua

Liu

Chef

et al. 2018

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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Statistical analysis on performance degradation of 90 nm bulk Si MOS devices irradiated by heavy ions

Cited by 2 publications

References 10 publications

Statistical analysis on the effects of heavy ion irradiation on 65 nm bulk silicon MOS devices

Statistical analysis on the effects of heavy ion irradiation on 65 nm bulk silicon MOS devices

Failure Analysis of Damages on Advanced Technologies Induced by Picosecond Pulsed Laser During Space Radiation SEE Testing

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