Statistical and Electrical Modeling of FDSOI Four-Gate Qubit MOS Devices at Room Temperature

Abstract

This paper presents an electrical characterization and a compact modeling of FD-SOI four-gate qubit MOS devices, carried out at room temperature and in linear regime. The main figures of merit are extracted from average drain current curves using Yfunction method. Poisson solver-based simulations are performed to interpret the experimental data, in particular the influence among gates and the effective channel length modulation. Furthermore, a drain current matching analysis between gates is conducted, and the main variability parameters are extracted. Our results, despite the unconventional device engineering, show a variability performance comparable to the state-of-the-art 28nm FD-SOI technology. Finally, a Lambert function based model is developed to validate both the electrical and statistical characterization. It is assumed, according to the experimental data, that the four gate device can be modeled as the series of four identical and independent transistors. Including the contribution of source and drain access resistance it has been possible to reproduce the device behavior at high external gates voltages.

SPICE compact model of controlling electrons of spin qubits using FinFET

“…As expected, the oscillations became less significant with increase in temperature. Cryogenic characterization of FinFETs has already been performed in a variety of temperatures ranging from 4 to 300 K. [18][19][20][21][22][23][24][25][26] However, the HSPICE used in this study guaranteed that the operation takes place at more than 13.15 K (=−260°). As can be easily inferred, lower temperature operation improves the Coulomb oscillation; thus, we consider the limitation of the low 13.15 K as not significant.…”

Design of silicon-on-insulator field-effect transistor using graphene channel to improve short channel effects over conventional devices

“…The stability of the device is also enhanced. A four-gate FDSOI was characterized at room temperature by Catapano et al [23]. The four gates are seen to interfere with one another.…”