Statistical Extraction of Normally and Lognormally Distributed Model Parameters for Power MOSFETs

Tsukamoto, Hiroki; Shintani, Michihiro; Satō, Takashi

doi:10.1109/tsm.2020.2975300

Cited by 5 publications

(4 citation statements)

References 20 publications

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“…This device has advantages such as high switching speed and good efficiency at low voltage levels [32]. In choosing MOSFETs, there are several parameters that become a major concern [33,34], namely: (1) RDS(on) is the resistance between drain and source when the MOSFET is in the ON position. ( 2) VGS(on) is the reference voltage used by the MOSFET to trigger the Gate which makes the MOSFET channel carry the maximum current.…”

Section: Ii3 Mosfetmentioning

confidence: 99%

Electrical Design of a Portable Pure Sine Wave Inverter Using Ferrite Core Transformer and Double Stage Technique

Purwanto

Wijayanto

Ardiyanto

et al. 2023

JET

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The size of the iron core transformer in an inverter is large and heavy because it has more conductor turns and works at low frequencies. In contrast, ferrite core transformers are designed to work at high frequencies, so the number of turns of the conductor is less, and the transformer size is relatively small and light. Device portability is a significant challenge in designing high-power inverters. This research uses a ferrite core transformer to design a portable pure sine wave inverter. A two-stage technique is proposed in designing the inverter so that the dc-link voltage and capacitor size can be flexibly selected, and the device size can be compacted. The design consists of two stages. First, a circuit to generate a 400-Volt DC voltage is designed using IC SG3525, a MOSFET power amplifier, and a ferrite core step-up transformer. Second, a pure sine wave generator circuit is constructed using an EGS002 module, MOSFETs, and a filter circuit. Experiments are performed by measuring the output voltage, monitoring power and frequency, and observing the waveform with an oscilloscope. The results reveal that the designed inverter can generate a 220-volt pure sine wave output, a maximum power of 500 Watts, a frequency of 50 Hz, and an efficiency between 91.4% to 98.1%.

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Section: Ii3 Mosfetmentioning

confidence: 99%

Electrical Design of a Portable Pure Sine Wave Inverter Using Ferrite Core Transformer and Double Stage Technique

Purwanto

Wijayanto

Ardiyanto

et al. 2023

JET

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“…where I di (t) and V dsi (t), respectively, represent the drain current waveform and the drain-source voltage waveform of Q i . In (29), t on ini is the time when V gsi changes to 10% of its final value, where V gsi is the gate-source voltage waveform of Q i , and t on fin is the time V dsi drops to 10% of its initial value. Similarly, t off ini denotes the time V gsi decreases to 90% of its on-state value, while t off fin is the instant at which V dsi increases to 90% of its off-state value.…”

Section: Table IV Extracted Mean and Standard Deviation Of Model Para...mentioning

confidence: 99%

“…Due to computational costs and the necessary modeling effort, statistical circuit designs can only consider the statistical variations of a few model parameters. Simultaneously, the statistical properties of the circuit of interest need to be represented accurately [29]. To the best of our knowledge, no prior study has discussed using a limited number of statistical model parameters to analyze Fig.…”

Section: Introductionmentioning

confidence: 99%

Dominant Model-Parameter Determination for the Analysis of Current Imbalance Across Paralleled Power Transistors

Nakamura

Shintani

Satō

2023

IEEE Trans. Power Electron.

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This paper proposes a new sensitivity-based analytical equation, the n-devices forward propagation of variance (NFPV). Using the proposed NFPV equation, the dominant device model parameters-essential for accurate analysis of energy-loss variation due to the current imbalance across paralleled power transistors from statistical parameter variations-are efficiently determined. The proposed method with the NFPV equation is faster than conventional methods that use Monte Carlo simulation. We conducted experimental validation using the measured current-voltage characteristics of commercially available 100 silicon MOSFETs and 300 silicon carbide MOSFETs. The results show that the proposed NFPV-based method efficiently finds the dominant device model parameters, which are sufficient and necessary to reproduce the energy-loss variation, regardless of the number of parallel transistors. The results also show that the determined dominant device model parameters are valid under practical situations, such as uneven parasitic inductances and device temperature imbalance among paralleled transistors. The proposed method determines the dominant device model parameters 9.33 times faster than the conventional method while maintaining the same accuracy. Additionally, we demonstrate that, compared with the conventional method, an increase in the number of candidate statistical model parameters increases the efficiency of the proposed method.

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“…The golden device selection is not sufficiently discussed in the literature in the context of RF and microwave transistors [11]. Corner-based statistical modeling [12][13][14][15] is similar to the considered problem. Both tasks deal with parameter variation due to process imperfection.…”

Section: Introductionmentioning

confidence: 99%

Automatic golden device selection and measurement smoothing algorithms for microwave transistor small-signal noise modeling

Salnikov

Добуш²,

Popov³

et al. 2022

Int. J. Microw. Wireless Technol.

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We propose the techniques for automatic processing of measurement results in the context of golden (typical) device selection and noise figure measurement. These techniques are for golden (typical) device selection and noise figure measurement processing. Automation of measurement result processing and microwave element modeling speeds up a modeling routine and decreases the risk of possible errors. The techniques are validated through modeling of 0.15 μm GaAs pHEMTs with 4 × 40 μm and 4 × 75 μm total gate widths. Two test amplifiers were designed using the developed models. The amplifier modeling results agree well with measurements which confirms the validity of the proposed techniques. The proposed algorithm is potentially applicable to other circuit types (switches, digital, power amplifiers, mixers, oscillators, etc.) but may require different settings in those cases. However, in the presented work, we validated the algorithm for the linear and low-noise amplifiers only.

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Statistical Extraction of Normally and Lognormally Distributed Model Parameters for Power MOSFETs

Cited by 5 publications

References 20 publications

Electrical Design of a Portable Pure Sine Wave Inverter Using Ferrite Core Transformer and Double Stage Technique

Electrical Design of a Portable Pure Sine Wave Inverter Using Ferrite Core Transformer and Double Stage Technique

Dominant Model-Parameter Determination for the Analysis of Current Imbalance Across Paralleled Power Transistors

Automatic golden device selection and measurement smoothing algorithms for microwave transistor small-signal noise modeling

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