The bus transceiver is a key device for data caching and transmission in communication systems and a key device for space communication. In this paper, the carrier distribution in the silicon material inside the device is analyzed for a typical highspeed bus transceiver linear device, and the effects of 0.1nJ, 1.0nJ and 10nJ on the carrier concentration and focusing point are analyzed by finite element simulation. The single-particle transient (SET) sensitivity of each functional circuit of the device was analyzed by local scanning of the device chip using a pulsed laser beam. The critical laser energy and sensitive position distribution of the single-event transient of the device were obtained. It is found that the device will show transient pulses when the pulsed laser energy is around 1.3 nJ, single-particle latching phenomenon when the pulsed laser energy is around 1.8 nJ, and single-event latching phenomenon when the pulsed laser energy continues to increase to 5 nJ. This study explores an economical and convenient method of bus transceiver SET evaluation using pulsed laser probe, which is an important reference value for high-speed bus applications in space.