Statistical variability in FinFET devices with intrinsic parameter fluctuations

Hwang, Chih Hong; Li, Yiming; Han, Ming

doi:10.1016/j.microrel.2010.01.041

Cited by 12 publications

(5 citation statements)

References 15 publications

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“…Overall, the major sources of variability expected for FinFETs are the L G , W F IN , H F IN and gate WF [36]. Amongst all variability sources, it is shown that the V t is mainly set by the gate WF, with fluctuations having a direct impact on its limits [37][38][39][40].…”

Section: Finfet Technology and Variability Impactmentioning

confidence: 99%

Robust FinFET Schmitt Trigger Designs for Low Power Applications

Moraes¹,

Zimpeck²,

Meinhardt³

et al. 2020

IFIP Advances in Information and Communication Technology

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The IoT development alongside with the more pronounced impact of process variability in modern technology nodes, is the central reason to control variability impact. Given the broad set of IoT devices running on battery-oriented environments, energy consumption should be minimal and the operation reliable. Schmitt Trigger inverters are frequently used for noise immunity enhancement, and have been recently applied to mitigate radiation effects and variability impact. Yet, Schmitt Trigger operation at nominal voltage still introduces high deviation on power consumption. Thus, the main contribution of this work is to identify the relationship between transistor sizing, supply voltage, energy, and process variability robustness to achieve a minimal energy consumption circuit while keeping robustness. On average, scenarios with a lower supply voltage applied on layouts with a smaller number of fins, presented adequate robustness in high variability scenarios. Exploring voltage and transistor sizing made possible a reduction of about 24.84% on power consumption.

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Section: Finfet Technology and Variability Impactmentioning

confidence: 99%

Robust FinFET Schmitt Trigger Designs for Low Power Applications

Moraes¹,

Zimpeck²,

Meinhardt³

et al. 2020

IFIP Advances in Information and Communication Technology

View full text Add to dashboard Cite

show abstract

“…Some works have investigated the impact on the threshold voltage and also on the device current I OFF and I ON of sources of variability in a 3D FinFET models [14][15][16]. Gold Standard Simulations Ltd. (GSS) shows that, although the random distribution of dopants (RDD) is a major cause of variability in bulk CMOS technologies, their contribution in FinFET technology is significantly reduced due to the low doping of the channel [14].…”

Section: Finfet Devices Under Process Variabilitymentioning

confidence: 99%

“…It has been shown that the threshold-voltage fluctuation due to MGG is close to Gaussian distribution and the standard deviation is almost linearly proportional to metal-grain size [17]. Recent researches highlights the strong influence of WFF in the threshold voltage and mainly, in the I ON and I OFF currents [15].…”

Section: Finfet Devices Under Process Variabilitymentioning

confidence: 99%

Predictive evaluation of electrical characteristics of sub-22nm FinFET technologies under device geometry variations

Meinhardt

Zimpeck

Reis

2014

Microelectronics Reliability

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“…WKF-induced circuit variations, such as timing and power fluctuations [26,27,28], seriously affect the dynamic property of GAA NW CMOS circuits. Most previous research only focused on the DC characteristics of N-type planar or fin-typed MOSFET devices when considering the aforementioned variability [10,28,29,30]. Various fluctuations of circuit characteristics, such as noise margin (NM), timing, and power consumption are also important to research, but the variability of GAA NW CMOS circuits has not been clearly studied yet.…”

Section: Introductionmentioning

confidence: 99%

“…Various fluctuations of circuit characteristics, such as noise margin (NM), timing, and power consumption are also important to research, but the variability of GAA NW CMOS circuits has not been clearly studied yet. To comprehensively explore the aforementioned issues for 10 nm gate GAA NW MOSFETs and CMOS circuits induced by WKF and different ARs, we extend an experimentally-calibrated three-dimensional (3D) quantum-mechanically-corrected device and circuit simulation [1,18,26,27,28,29]. The engineering findings of this study indicate that falling time (t f ) is lower than rising time (t r ) owing to the relatively larger driving capability of the N-type device.…”

Section: Introductionmentioning

confidence: 99%

Characteristic Fluctuations of Dynamic Power Delay Induced by Random Nanosized Titanium Nitride Grains and the Aspect Ratio Effect of Gate-All-Around Nanowire CMOS Devices and Circuits

Chen

Chuang

et al. 2019

Materials

Self Cite

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In this study, we investigate direct current (DC)/alternating current (AC) characteristic variability induced by work function fluctuation (WKF) with respect to different nanosized metal grains and the variation of aspect ratios (ARs) of channel cross-sections on a 10 nm gate gate-all-around (GAA) nanowire (NW) metal–oxide–semiconductor field-effect transistor (MOSFET) device. The associated timing and power fluctuations of the GAA NW complementary metal–oxide–semiconductor (CMOS) circuits are further estimated and analyzed simultaneously. The experimentally validated device and circuit simulation running on a parallel computing system are intensively performed while considering the effects of WKF and various ARs to access the device’s nominal and fluctuated characteristics. To provide the best accuracy of simulation, we herein calibrate the simulation results and experimental data by adjusting the fitting parameters of the mobility model. Transfer characteristics, dynamic timing, and power consumption of the tested circuit are calculated using a mixed device–circuit simulation technique. The timing fluctuation mainly follows the trend of the variation of threshold voltage. The fluctuation terms of power consumption comprising static, short-circuit, and dynamic powers are governed by the trend that the larger the grain size, the larger the fluctuation.

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Statistical variability in FinFET devices with intrinsic parameter fluctuations

Cited by 12 publications

References 15 publications

Robust FinFET Schmitt Trigger Designs for Low Power Applications

Robust FinFET Schmitt Trigger Designs for Low Power Applications

Predictive evaluation of electrical characteristics of sub-22nm FinFET technologies under device geometry variations

Characteristic Fluctuations of Dynamic Power Delay Induced by Random Nanosized Titanium Nitride Grains and the Aspect Ratio Effect of Gate-All-Around Nanowire CMOS Devices and Circuits

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