Status and outlook of emerging nonvolatile memory technologies

Müller, Georg; Happ, T.; Kund, M.; Lee, Gill Yong; Nagel, N.; Sezi, Recai

doi:10.1109/iedm.2004.1419223

Cited by 52 publications

(42 citation statements)

References 5 publications

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“…I N THE continuing development of universal memory, the search for new memory technologies that can compete with embedded dynamic random access memory and Flash memory has resulted in an emphasis on devices that offer the advantages of low-power nonvolatile operation, nondestructive read, low fabrication cost, and complementary-metal-oxidesemiconductor (CMOS) compatibility [1]. Among the various new memories, conductive bridging random access memory (CBRAM) technology combines key features of the established Flash, SRAM, and DRAM memory platforms, including small size, nonvolatility, high write endurance, and fast random access speed [2], [3]. Because the switching characteristics of CBRAM originate in the formation and annihilation of metallic bridges [4], the metal which takes part in the metallic bridges must show the reversible change between the oxidation and reduction state with applied bias voltage.…”

Section: Improvement Of Cbram Resistance Window By Scaling Down Electmentioning

confidence: 99%

Improvement of CBRAM Resistance Window by Scaling Down Electrode Size in Pure-GeTe Film

Choi

Lee

Bae

et al. 2009

IEEE Electron Device Lett.

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TaN-pure-GeTe-Cu bipolar switching devices which can be adaptable to semiconductor processes were fabricated as a function of top-electrode sizes (0.2, 0.4, 10, and 50 μm). The on/off resistance change ratio increased highly with decreasing electrode size. In particular, the on/off resistance change ratio was about 10 3 when the electrode size was scaled down to 200 nm. We obtained the characteristics of conductive bridging memory cell using pure-GeTe film without any doping of Cu or Ag; we also determined the reason for the enhancement of the on/off resistance change ratio when scaling down the electrode size.Index Terms-Conductive bridging random access memory (CBRAM), Cu, dry process, e-beam lithography, GeTe, on/off ratio, scaling down, TaN. I N THE continuing development of universal memory, the search for new memory technologies that can compete with embedded dynamic random access memory and Flash memory has resulted in an emphasis on devices that offer the advantages of low-power nonvolatile operation, nondestructive read, low fabrication cost, and complementary-metal-oxidesemiconductor (CMOS) compatibility [1]. Among the various new memories, conductive bridging random access memory (CBRAM) technology combines key features of the established Flash, SRAM, and DRAM memory platforms, including small size, nonvolatility, high write endurance, and fast random access speed [2], [3]. Because the switching characteristics of CBRAM originate in the formation and annihilation of metallic bridges [4], the metal which takes part in the metallic bridges must show the reversible change between the oxidation and reduction state with applied bias voltage. The metallic material that satisfies both criteria is either Ag or Cu, and thus, a CBRAM-applicable material always contains either one of those two elements. However, these elements are of limited applicability to Si-based semiconductor processes, owing to contamination or difficulty in the dry etching process.

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Section: Improvement Of Cbram Resistance Window By Scaling Down Electmentioning

confidence: 99%

Improvement of CBRAM Resistance Window by Scaling Down Electrode Size in Pure-GeTe Film

Choi

Lee

Bae

et al. 2009

IEEE Electron Device Lett.

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“…Indexing in the Traditional Approach and in SIAS but not RAM); read/write asymmetry; endurance; addressing mode; energy consumption; parallelism. Detailed information for NVM is available in [3], [4], [5], for NAND Flash in [6], [7], [8].…”

Section: Tutorial Outlinementioning

confidence: 99%

DBMS on modern storage hardware

Petrov

Gottstein

Hardock

2015

2015 IEEE 31st International Conference on Data Engineering

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In the present tutorial we perform a cross-cut analysis of database systems from the perspective of modern storage technology, namely Flash memory. We argue that neither the design of modern DBMS, nor the architecture of Flash storage technologies are aligned with each other. The result is needlessly suboptimal DBMS performance and inefficient Flash utilisation as well as low Flash storage endurance and reliability.We showcase new DBMS approaches with improved algorithms and leaner architectures, designed to leverage the properties of modern storage technologies. We cover the area of transaction management and multi-versioning, putting a special emphasis on: (i) version organisation models and invalidation mechanisms in multi-versioning DBMS; (ii) Flash storage management especially on append-based storage in tuple granularity; (iii) Flash-friendly buffer management; as well as (iv) improvements in the searching and indexing models. Furthermore, we present our NoFTL approach to native Flash access that integrates parts of the Flash-management functionality into the DBMS yielding significant performance increase and simplification of the I/O stack. In addition, we cover the basics of building large Flash storage for DBMS and revisit some of the RAID techniques and principles.

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“…New memory technologies are widely being researched with particular focus on its scalability beyond conventional memory technologies [1]- [3]. Those with the most promise include phase change memory (PCM) [4] and transition metal oxide (TMO) memories such as NiO, TiO 2 , and HfO 2 [5].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of emerging nanoscale memory

Kim

Zhang

Lee

et al. 2009

2009 IEEE International Symposium on Circuits and Systems

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Conventional solid state memory technologies such as flash memory, DRAM, and SRAM are facing scaling challenges due to fundamental limitations. Therefore, various new memory technologies are being widely researched and evaluated to continue the cost/performance improvement trend of solid state memory devices. To assess the potential scalability of emerging nanoscale memory beyond conventional limits, it is essential to characterize and understand how differently they perform at the nanoscale compared to known properties in the microscale. New nanoscale fabrication methods and new memory technologies offer a great opportunity for future memory device research. In this regard, we evaluated characteristics of nanoscale phase change memory and Ni oxide memory using nanofabrication technologies such as nanowire growth, nanocrystal synthesis, diblock copolymer patterning, and ebeam lithography. Evaluated characteristics include not only their device performance but also key material properties that might affect the ultimate device performance. The nanofabrication method for each memory material is also discussed due to its potential to overcome the difficulties of conventional semiconductor fabrication process.

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Status and outlook of emerging nonvolatile memory technologies

Cited by 52 publications

References 5 publications

Improvement of CBRAM Resistance Window by Scaling Down Electrode Size in Pure-GeTe Film

Improvement of CBRAM Resistance Window by Scaling Down Electrode Size in Pure-GeTe Film

DBMS on modern storage hardware

Fabrication and characterization of emerging nanoscale memory

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