Status of High-Index Materials for Generation-Three 193nm Immersion Lithography

Zimmerman, Paul; Peski, Chris Van; Rice, Bryan J.; Byers, Jeff M.; Turro, Nicholas J.; Lei, Xuegong; López‐Gejo, Juan; Liberman, V.; Palmacci, Steve; Rothchild, Mordy; Whitker, Andrew; Blakey, Idriss; Chen, Lan; Dargaville, Bronwin; Li, Heping

doi:10.2494/photopolymer.20.643

Cited by 17 publications

(22 citation statements)

References 7 publications

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“…Unfortunately it was determined through significant work by several groups that there are distinct limits to how much sulfur can be incorporated into 193nm type polymers without severely degrading the required resist properties. 6,[8][9] The properties that degraded included the absorbance, T g , and dissolution, all of which negatively affected the resists' imaging performance. Even in the best case, the highest refractive index being obtained for a resist using sulfur approaches only about 1.80, far from the goal of 1.90.…”

Section: Resultsmentioning

confidence: 99%

“…The difficulty of increasing the RI while maintaining the desired material properties has been pointed out previously. 6,11 We can examine the relationship between refractive index and material properties using equation 1, where η is the absolute index of refraction, K d is the relative permittivity (dielectric constant), and K m is the relative permeability. It is a good assumption that for all organic species that K m will be approximately 1 leaving K d the relative permittivity (dielectric constant) as the only way to dramatically affect the refractive index.…”

Section: Resultsmentioning

confidence: 99%

“…Clearly, modifying a conventional 193 nm resist with a RI of approximately 1.7 and increasing it to 1.9 is not a trivial undertaking. 6 …”

Section: Simulationsmentioning

confidence: 99%

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Development of an operational high refractive index resist for 193nm immersion lithography

Zimmerman¹,

Byers²,

Piscani³

et al. 2008

Advances in Resist Materials and Processing Technology XXV

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Generation-three (Gen-3) immersion lithography offers the promise of enabling the 32nm half-pitch node. For Gen-3 lithography to be successful, however, there must be major breakthroughs in materials development: The hope of obtaining numerical aperture imaging ≥ 1.70 is dependent on a high index lens, fluid, and resist. Assuming that a fluid and a lens will be identified, this paper focuses on a possible path to a high index resist. Simulations have shown that the index of the resist should be ≥ 1.9 with any index higher than 1.9 leading to an increased process latitude. Creation of a high index resist from conventional chemistry has been shown to be unrealistic. The answer may be to introduce a high index, polarizable material into a resist that is inert relative to the polymer behavior, but will this too degrade the performance of the overall system? The specific approach is to add very high index (~2.9) nanoparticles to an existing resist system. These nanoparticles have a low absorbance; consequently the imaging of conventional 193nm resists does not degrade. Further, the nanoparticles are on the order of 3nm in diameter, thus minimizing any impact on line edge roughness (LER).

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Development of an operational high refractive index resist for 193nm immersion lithography

Zimmerman¹,

Byers²,

Piscani³

et al. 2008

Advances in Resist Materials and Processing Technology XXV

Self Cite

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“…It is expected that 193i lithography will allow the industry to move beyond the current 65 nm node to the 45 nm node. Initially, it was thought that the use of higher refractive index fluids [7] and photoresists, [8][9][10][11][12][13] 193i+ lithography would be able to tackle the 32 nm node. However, the significant challenges associated with this technology have meant that it has been surpassed by double patterning technologies.…”

Section: Introductionmentioning

confidence: 99%

Sensitive polysulfone based chain scissioning resists for 193nm lithography

et al. 2011

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Chain scissioning resists do not require addition of photoacid generators to function. Previously reported chain scissioning polysulfone resists were able to achieve enhanced sensitivity by incorporation of absorbing repeat units, but these groups also inhibited the depolymerization reaction, which could further enhance sensitivity. Here we report the development of sensitive polysulfone chain scissioning resists for 193 nm that are able to undergo depolymerization. The effect of depolymerization of LER is also discussed. These polymers underwent CD shrinkage upon overdose, which may be useful for double patterning processes.

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“…It is expected that 193i lithography will allow the industry to move beyond the current 65 nm node to the 45 nm node. Initially, it was thought that the use of higher refractive index fluids [7] and photoresists [8][9][10][11][12][13][14][15], 193i+ lithography would be able to tackle the 32 nm node. However, the significant challenges associated with this technology have meant that it has been surpassed by double patterning technologies For these reasons alternative strategies are being actively explored by the semiconductor industry.…”

Section: Introductionmentioning

confidence: 99%

Non-chemically amplified resists for 193-nm immersion lithography: influence of absorbance on performance

et al. 2010

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The feasibility of three polymer systems for use as non chemically amplified resists for 193 nm lithography are discussed. The three systems are polycarbonates, polyphthalaldehydes and polysulfones. In general it was found that increased absorbance resulted in higher sensitivity to 193 nm light. However, the exception to this was the polycarbonates, which were found to undergo crosslinking due to an alkene group present in the polymer backbone. Although polyphthalaldehydes were very sensitive, their absorbance values were too high to be useful in a commercial environment. Absorbing polysulfones were found to be sensitive to 193 nm light and initial patterning results have been presented.

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Status of High-Index Materials for Generation-Three 193nm Immersion Lithography

Cited by 17 publications

References 7 publications

Development of an operational high refractive index resist for 193nm immersion lithography

Development of an operational high refractive index resist for 193nm immersion lithography

Sensitive polysulfone based chain scissioning resists for 193nm lithography

Non-chemically amplified resists for 193-nm immersion lithography: influence of absorbance on performance

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