Status of Lumped Elements in Microwave Integrated Circuits - Present and Future

Caulton, M.; Hershenov, B.; Knight, S.P.; DeBrecht, R.E.

doi:10.1109/tmtt.1971.1127586

Cited by 56 publications

(14 citation statements)

References 9 publications

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“…To shrink the size of the coupler, there are several techniques which have been proposed and developed [7][8][9][10][11][12][13][14][15][16][17][18]. The lumpedelement technique described in [7,8] provides significant size reduction.…”

Section: Introductionmentioning

confidence: 99%

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Miniaturized Size Branch Line Coupler Using Open Stubs With High-Low Impedances

Elhiwairis¹,

Rahim²,

Chude-Okonkwo³

et al. 2011

PIER Letters

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Abstract-In this paper, a miniaturized branch-line coupler is proposed. The topology of the circuit is designed using novel design of T-model approach with open stubs with high-low impedances, which provides necessary bandwidth for WLAN band at 2.45 GHz. The miniaturized branch-line coupler is designed and fabricated with a low-cost FR4 substrate as a platform in producing significantly reduction by more than 64.21% compared to the conventional coupler on inexpensive board. Furthermore, the coupler can equally divide the input signal with 90 • phase of difference while maintaining the initial power from the source.

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Section: Introductionmentioning

confidence: 99%

“…The lumpedelement technique described in [7,8] provides significant size reduction. However, the design of lumped-element circuits must be rather pragmatic and needs precise inductor models based on careful measurements of test elements [9].…”

Section: Introductionmentioning

confidence: 99%

Miniaturized Size Branch Line Coupler Using Open Stubs With High-Low Impedances

Elhiwairis¹,

Rahim²,

Chude-Okonkwo³

et al. 2011

PIER Letters

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“…6,7 The drawback is that these inductors are characterized by relatively low quality factors. 8 This quality factor is determined by the inductor geometry, the type of interconnect metal ͑Al, Au, or Cu͒, 9 the thickness of the metallization, the vertical distance between underpass/ air bridge to the inductor windings, 10 and the dielectric loss of the substrate.…”

Section: Introductionmentioning

confidence: 99%

High-Q micromachined three-dimensional integrated inductors for high-frequency applications

Weon

Jeon

Mohammadi

2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Three-dimensional micromachined inductors are fabricated on high-resistivity ͑10 k⍀ cm͒ and low-resistivity ͑10 ⍀ cm͒ Si substrates using a stressed metal technology. On high-resistivity Si substrate with low-k dielectric material ͑SU-8™͒, this technology achieves a quality factor Q of 75 for a 1 nH inductor at frequencies around 4 GHz and a self-resonant frequency f sr above 20 GHz. Using Si bulk micromachining to etch away the low-resistivity Si substrate with a combination of deep reactive ion etching and tetramethyl ammonium hydroxide etching methods, a 1.2 nH inductor achieves a peak quality factor Q of 140 at a frequency of 12 GHz with a self-resonant frequency f sr above 40 GHz. The dependence of high-frequency performance on the inductor's variables, such as the number of turns, turn-to-turn gap, and substrate type, has been investigated. Excellent performance is achieved by removing the substrate due to the complete elimination of substrate losses and the reduction of the parasitic capacitance. This technology is simple and provides high performance integrated inductors on Si or compound-semiconductor platforms.

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“…Implementing RF circuits on integrated circuit technology introduced integrated spiral inductors that are compatible with the IC technology [5,6]. The drawback is that these inductors are characterized by relatively low quality factors [7].…”

Section: Introductionmentioning

confidence: 99%

Design of high-Q 3-D integrated inductors for high frequency applications

Weon

Kim

Mohammadi

2006

Analog Integr Circ Sig Process

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Design of 3-Dimensional micromachined inductors on high-(10 K · cm) and low-resistivity(10 · cm) Si substrate fabricated using stress metal technology we have developed [1, 2] is presented. Using high frequency electromagnetic simulation of 3-Dimensional inductors performed by Ansoft HFSS R , we have investigated the effects of number of turns, effective radius, metal line width, and different substrates on the quality factor, Q and self-resonant frequency, f sr of these inductors. We also have compared the simulated results with the measurement results of 3-D inductors fabricated using this technology.

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Status of Lumped Elements in Microwave Integrated Circuits - Present and Future

Cited by 56 publications

References 9 publications

Miniaturized Size Branch Line Coupler Using Open Stubs With High-Low Impedances

Miniaturized Size Branch Line Coupler Using Open Stubs With High-Low Impedances

High-Q micromachined three-dimensional integrated inductors for high-frequency applications

Design of high-Q 3-D integrated inductors for high frequency applications

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