Status of the liquid-xenon-jet laser-plasma source for EUV lithography

Hansson, Björn; Rymell, L.; Berglund, Magnus; Hemberg, Oscar; Janin, E.; Thoresen, Jalmar; Mosesson, Sofia; Wallin, Johan; Hertz, Hans M.

doi:10.1117/12.472274

Cited by 40 publications

(25 citation statements)

References 17 publications

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“…This led to studies on liquid and gas targets [28][29][30]. Currently, the two primary EUV emitter materials are xenon and tin.…”

Section: Euv Sourcementioning

confidence: 99%

Next-generation lithography for 22 and 16 nm technology nodes and beyond

2011

Sci. China Inf. Sci.

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In this paper, next-generation lithography (NGL) for the 22 and 16 nm technology nodes and beyond is reviewed. A broad range of topics, including history, technologies, critical challenges, and the most plausible candidates are discussed. The 22 and 16 nm technology nodes rely on NGL. NGLs have been extensively studied. Because of technological issues, the semiconductor industry has stopped pursuing several NGLs, such as X-ray proximity lithography, ion projection lithography, and scattering with angular limitation projection electron lithography. Currently, the primary candidate technologies are extreme ultraviolet lithography (EUVL), maskless lithography (ML2), and nanoimprint lithography (NIL), with EUVL being the leading candidate. Since EUVL was first proposed in 1988, many studies have been conducted. Currently, there is no "show stopper" for EUVL. Moreover, challenges are present in almost all aspects of EUVL technology. Almost all primary semiconductor manufacturing companies plan to implement commercial pre-production step-and-scan exposure tools in 2011. However, EUVL power at an intermediate focusing level has not yet met the volume manufacturing requirements. EUVL resists have been significantly improved recently, but there is still a critical need to meet requirements on resolution, line width roughness, and sensitivity. Creating a defect-free EUVL mask is another obstacle to the application of EUVL. ML2 and NIL, like EUVL, have also undergone significant progress recently, but throughput, defect control, and cost remain the critical impediments for practical application.

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“…This led to studies on liquid and gas targets [28][29][30]. Currently, the two primary EUV emitter materials are xenon and tin.…”

Section: Euv Sourcementioning

confidence: 99%

Next-generation lithography for 22 and 16 nm technology nodes and beyond

2011

Sci. China Inf. Sci.

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“…Liquid-jet systems have been extensively used as targets in negligible-debris laser-produced plasma soft x-ray and EUV sources. [10][11][12] A liquid-gallium jet has also been used as target in hard x-ray production in femtosecond laser-plasma experiments. 13 Furthermore, an electron beam has been combined with a water jet for low power soft x-ray generation via fluorescence.…”

Section: Current State-of-the-art Sourcesmentioning

confidence: 99%

Liquid-metal-jet anode x-ray tube

2004

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We describe a novel electron-impact x-ray source based on a high-speed liquid-metal-jet anode. Thermal power load calculations indicate that this new anode concept potentially could increase the achievable brightness in compact electron-impact x-ray sources by more than a factor 100 compared to current state-of-the-art rotating-anode or microfocus sources. A first, successful, low-power proof-of-principle experiment is described and the feasibility of scaling to high-brightness and high-power operation is discussed. Some possible applications that would benefit from such an increase in brightness are also briefly described.

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“…It produces a long, continuous stream of apparently fully liquid Xe, much like water exiting a garden hose. 8 Its diameter is as small as the pinhole, which in this case is 50 microns, and its length is well over 10 mm. The advantage of a long steady stream is the possibility of illuminating the jet with the laser as far from the nozzle as possible.…”

Section: -7mentioning

confidence: 99%

<title>System integration and performance of the EUV engineering test stand</title>

Tichenor¹,

Ray-Chaudhuri²,

Replogle³

et al. 2001

SPIE Proceedings

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The Engineering Test Stand (ETS) is a developmental lithography tool designed to demonstrate full-field EUV imaging and provide data for commercial-tool development. In the first phase of integration, currently in progress, the ETS is configured using a developmental projection system, while fabrication of an improved projection system proceeds in parallel. The optics in the second projection system have been fabricated to tighter specifications for improved resolution and reduced flare. The projection system is a 4-mirror, 4x-reduction, ring-field design having a numeral aperture of 0.1, which supports 70 nm resolution at a k 1 of 0.52. The illuminator produces 13.4 nm radiation from a laser-produced plasma, directs the radiation onto an arc-shaped field of view, and provides an effective fill factor at the pupil plane of 0.7. The ETS is designed for fullfield images in step-and-scan mode using vacuum-compatible, magnetically levitated, scanning stages. This paper describes system performance observed during the first phase of integration, including static resist images of 100 nm isolated and dense features.

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Status of the liquid-xenon-jet laser-plasma source for EUV lithography

Cited by 40 publications

References 17 publications

Next-generation lithography for 22 and 16 nm technology nodes and beyond

Next-generation lithography for 22 and 16 nm technology nodes and beyond

Liquid-metal-jet anode x-ray tube

<title>System integration and performance of the EUV engineering test stand</title>

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