2013 IEEE International Reliability Physics Symposium (IRPS) 2013
DOI: 10.1109/irps.2013.6531984
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Status Quo and trends of GaN power devices

Abstract: This paper reviews the recently developed technologies for GaN-based power devices which is coming close to the practical application. Experimentally fabricated GaN inverter system attained the world-highest conversion efficiency over 99.3% by using GIT (Gate Injection Transistor). Reliability issues become increasingly essential due to the increase of power density of GaN-based device. Passivation technique is addressed in view of improving the on-resistance as well as suppressing the current collapse. Direct… Show more

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