Steady and transient optical properties of CsPbBr₃/Pb₃(PO₄)₂ perovskite quantum dots for white light-emitting diodes

Abstract

Surface passivation has been widely accepted as an effective method to improve the stability and photoluminescence performance of perovskite quantum dots (QDs). In this paper, we report Pb3(PO4)2 coated CsPbBr3...

Two‐Photon Pumped Single‐Mode Lasing in CsPbBr3 Perovskite Microwire

“…[32,33] Therefore, P2 and P3 can be attributed to the firstorder phonon replicas (FX-1LO) and second-order phonon replicas (FX-2LO) of the free-exciton (FX) principal zero phonon line (ZPL), respectively, revealing the role of exciton-phonon coupling in light emission of CsPbBr 3 microwires. In addition, another important characteristic of temperature-dependent PL spectra is the dramatically decreasing of emission intensity with the increasing of temperature, which can be attributable to the thermally activated non-radiative recombination process, [34] Figure 2c shows the dependence of PL emission intensity on temperature, which can be fitted by the Arrhenius equation of…”

“…[ 32,33 ] Therefore, P2 and P3 can be attributed to the first‐order phonon replicas (FX‐1LO) and second‐order phonon replicas (FX‐2LO) of the free‐exciton (FX) principal zero phonon line (ZPL), respectively, revealing the role of exciton‐phonon coupling in light emission of CsPbBr 3 microwires. In addition, another important characteristic of temperature‐dependent PL spectra is the dramatically decreasing of emission intensity with the increasing of temperature, which can be attributable to the thermally activated non‐radiative recombination process, [ 34 ] Figure 2c shows the dependence of PL emission intensity on temperature, which can be fitted by the Arrhenius equation of $$I\ ( T ) = {I}_0/( {1 + A{e}^{ - {E}_{\mathrm{b}}/{k}_{\mathrm{b}}T}} )$$, where I 0 represents the PL emission intensity at 0 K, A is the proportional coefficient, E b is the exciton binding energy, and k b is the Boltzmann constant. In this case, the exciton binding energy E b is extracted as 33.15 meV through fitting, which is higher than the thermal ionization energy of room temperature (≈26 meV).…”