Steady-state and transient current transport in undoped polycrystalline diamond films

Jauhiainen, Anders; Bengtsson, Stefan; Engström, Olof

doi:10.1063/1.366363

Cited by 14 publications

(9 citation statements)

References 19 publications

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“…[8][9][10][11][12][13] The UNCD samples we tested also exhibit nonlinear conductiv-ity, as observed during the I − V experiments and shown in Fig. [8][9][10][11][12][13] The UNCD samples we tested also exhibit nonlinear conductiv-ity, as observed during the I − V experiments and shown in Fig.…”

Section: E the Dependence Of Conduction Property On The Structure Ofsupporting

confidence: 56%

“…Poole-Frenkel ͑P-F͒ models with single and overlapping Coulombic potentials [8][9][10][11][12][13] show that the conduction is directly correlated with the sp 2 -bond carbon density and the role of hydrocarbon bonds in the conduction path formed by the sp 2 -bonded carbon, both of which act on the formation of extended networks of bonds. The deposition temperature affects the ratio of sp 2 and sp 3 bonding, the hydrogen content, as well as the crystalline structure.…”

Section: Introductionmentioning

confidence: 99%

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Electrical conduction in undoped ultrananocrystalline diamond thin films and its dependence on chemical composition and crystalline structure

Correa

Wen

et al. 2007

Journal of Applied Physics

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Ultrananocrystalline diamond film deposition by direct-current plasma assisted chemical vapor deposition using hydrogen-rich precursor gas in the absence of the positive columnInteresting trends in direct current electrical conductivity of chemical vapor deposited diamond sheetsThe electrical conduction behavior of undoped ultrananocrystalline diamond ͑UNCD͒ and its dependence on deposition temperature and chemical structure are presented. UNCD films were grown using a microwave plasma-enhanced chemical vapor deposition technique at deposition temperatures of 400°C and 800°C. The chemical structure of the UNCD films is characterized with several tools including: Elastic recoil detection analysis, Fourier transform infrared spectroscopy, electron energy loss spectroscopy, Raman spectroscopy, and environmental scanning electron microscope. The results show a higher content of sp 2 -bonded carbon for the 800°C deposition samples ͑ϳ65%͒ in comparison with the 400°C samples ͑ϳ38%͒. In both kinds of films, the hydrocarbon bonds have the saturated sp 3 structures, while there is lower hydrogen content in the 800°C samples ͑ϳ8%͒ than in the 400°C samples ͑ϳ10%͒. For conduction properties, experiments are conducted using a probe station and conductive-atomic force microscopy. Experimental data show that the samples deposited at 800°C are several orders of magnitude more conductive than the 400°C samples. The conduction occurs primarily along the grain boundary for both types of samples. The conductivity of both types of films also shows field dependent nonlinear behavior. Both the Poole-Frenkel models and single and overlapping Coulombic potential models show that the conduction is directly correlated with the sp 2 bond carbon density, and the role of the hydrocarbon bonds in the conduction path is formed by the network of the sp 2 bonded carbon.

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Section: E the Dependence Of Conduction Property On The Structure Ofsupporting

confidence: 56%

Section: Introductionmentioning

confidence: 99%

Electrical conduction in undoped ultrananocrystalline diamond thin films and its dependence on chemical composition and crystalline structure

Correa

Wen

et al. 2007

Journal of Applied Physics

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“…It may be evident from figure 5(b) that, irrespective of the changing polarity of the current I p , the parasitic charge is always negative. This follows immediately from equation (7), keeping in mind that for U > 0 the differential current I pc always has a positive sign.…”

Section: Fcm Performance Optimizationmentioning

confidence: 81%

Improving the performance of the feedback charge capacitance–voltage method

Thurzo

Zahn

Gmucová

et al. 2003

Meas. Sci. Technol.

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The feedback charge capacitance-voltage method (FCM) (Mego 1986 Rev. Sci. Instrum. 58 2798) is a pure time-domain technique originally used for measuring the quasi-static capacitance of semiconductor devices. The method is based on processing the output of a charge-to-voltage converter in response to a double-step (pulse) excitation of the device. Using a transient voltage processor comprising three gated integrators connected to a mixing unit, steady-state (leakage) current may be the source of severe experimental error in capacitance. First, there is a parasitic charge during the pulse that causes an error in sampling the baseline while activating the first channel for an aperture of finite duration t. Second, any uncompensated leakage present after the pulse leads to a charge increment representing what is called conduction loss in the frequency domain. Measures to be taken towards minimizing both errors are provided, based on a simultaneous action of active leakage current compensation and second-order filtering. A simple hardware solution for optimizing the dynamic range of the FCM under the leakage is provided. A non-instrumental FCM error connected with the constant dielectric loss in diamond thin films, due to the anomalous kinetics j (t) ∝ t −1 of the transient current, is analysed. The latter causes inaccuracy in assessing the instantaneous (geometrical) capacitance of diamond-based Schottky diodes. A proper gating of the charge-to-voltage converter is suggested for removal of the predicted error.

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“…The 2-3 m thick insulating layer consists of nominally undoped polycrystalline diamond deposited by a commercial firm. 3 Prior to deposition of this layer the wafers were pretreated using a method involving abrasion of their surfaces with diamond powder having a grain size of about 1 m. Deposition was performed in a hot filament chemical vapor deposition ͑CVD͒ system under the following conditions: substrate temperature 650-750°C, pressure 30-50 Torr, gas composition 1-2% CH 4 in H 2 , filament temperature 2100-2200°C, filament to substrate distance 1 cm. After diamond deposition the wafers were heat treated at 400°C for several hours in a hydrogen free ambient.…”

Section: Methodsmentioning

confidence: 99%

“…Moreover, due to nonequilibrium in the occupation of interface traps certain characteristic features are present, for instance the typical ledges in the curves. 4,5 These correspond to a situation where interface traps at the diamond-silicon interface can communicate with the charges in the energy bands of the silicon. Below the knees in the curves the interface traps are virtually frozen in because of the large energy barrier for emission from the trap energy level up to the bands.…”

Section: Capacitance-voltage Measurementsmentioning

confidence: 99%

Effect of an inhomogeneous insulating film on the capacitance of metal–insulator–semiconductor structures

Jauhiainen

Westberg

Bengtsson

1998

Journal of Applied Physics

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Steady-state and transient current transport in undoped polycrystalline diamond films

Cited by 14 publications

References 19 publications

Electrical conduction in undoped ultrananocrystalline diamond thin films and its dependence on chemical composition and crystalline structure

Electrical conduction in undoped ultrananocrystalline diamond thin films and its dependence on chemical composition and crystalline structure

Improving the performance of the feedback charge capacitance–voltage method

Effect of an inhomogeneous insulating film on the capacitance of metal–insulator–semiconductor structures

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