Steady-state and transient photoconductivity in hydrogenated amorphous silicon nitride films

Ay, İlker; Tolunay, Hüseyin

doi:10.1016/j.solmat.2003.06.005

Cited by 14 publications

(8 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The measurements and the model match reasonably well if the trap energy depth and the effective carrier mobility in the SiN (incorporating conduction band and trap-to-trap transport) take the values E T =0.85 eV and μ=5 cm 2 /(Vs), respectively. These values agree fairly well with the literature, where E T values from 0.8 to 1.8 eV can be found [1], [15], [16] and mobilities in the range of 0.1-5 cm 2 /(sV) values are reported [1], [17]. In agreement with the experimental results of Fig.…”

Section: Sample Fabrication and Measurement Setupsupporting

confidence: 92%

Direct probing of trapped charge dynamics in SiN by Kelvin Force Microscopy

Vianello

Nowak

Mariolle

et al. 2010

2010 International Conference on Microelectronic Test Structures (ICMTS)

View full text Add to dashboard Cite

show abstract

Section: Sample Fabrication and Measurement Setupsupporting

confidence: 92%

Direct probing of trapped charge dynamics in SiN by Kelvin Force Microscopy

Vianello

Nowak

Mariolle

et al. 2010

2010 International Conference on Microelectronic Test Structures (ICMTS)

View full text Add to dashboard Cite

show abstract

“…However, the threshold voltage dynamics during retention could be affected also by the charge distribution at the beginning of the retention experiment [7], and by the spatial redistribution of the stored charge due to the transport in the nitride. At this regard we note that, although the effective electron mobility in Si 3 N 4 reported by a few authors is low (∼0.1 cm 2 /(Vs) [8]), it is still large enough to induce significant changes on the charge spatial distribution even at low fields.…”

Section: Introductionmentioning

confidence: 68%

“…In order to avoid stability issues related to the Poisson/Drift Diffusion coupling we have however rewritten J DD in the form proposed by [10]. Note that, with expected mobilities in the order of 0.1-1 cm 2 /(Vs) [8], a field of 10-100 MV/cm is needed to reach the expected saturation velocity of 10 7 cm/s [11]. The boundary conditions for the DD equation at the Si 3 N 4 /tunnel-oxide interface are set by the direct and FowlerNordheim tunneling components of J 1 and by J 5 =qnv T ((5) in Fig.…”

Section: The Model a Physicsmentioning

confidence: 99%

Impact of the charge transport in the conduction band on the retention of Si-nitride based memories

Vianello

Driussi

Palestri

et al. 2008

ESSDERC 2008 - 38th European Solid-State Device Research Conference

View full text Add to dashboard Cite

An improved model for charge injection through ONO gate stacks, that comprises carrier transport in the conduction band of the silicon nitride (Si3N4), is used to investigate the program/retention sequence of Si3N4 based (SONOS/TANOS) non volatile memories without making assumptions on the initial distribution of the trapped charge at the beginning of retention.We show that carrier transport in the Si3N4 layer impacts the spatial charge distribution and consequently several other aspects of the retention transient. The interpretation of the Arrehnius plots of the high temperature retention data, typically used to infer the trap depth from the retention activation energy is discussed. The model provides a simple explanation of the small threshold voltage increase observed during retention experiments of thick tunnel oxide ONO stacks.

show abstract

“…Note that, in this case, the EQE was measured with a different system to the one used for Figure . The LIR phenomenon could be possibly ascribed to the photoconductivity of the SiN x film, which increases with light intensity; therefore, positive charges introduced by PID‐p can be easily discharged from the AlO x /SiN x stack. Ay and Tolunay demonstrated that for hydrogenated amorphous SiN x films with various nitrogen concentrations, their steady‐state photoconductivity at 300 K increases with the light intensity .…”

Section: Resultsmentioning

confidence: 99%

Elucidating potential‐induced degradation in bifacial PERC silicon photovoltaic modules

Luo

Hacke

Terwilliger

et al. 2018

Progress in Photovoltaics

View full text Add to dashboard Cite

This paper elucidates the behavior and underlying mechanism of potential‐induced degradation (PID) on the rear side of p‐type monocrystalline silicon bifacial passivated emitter and rear cell (PERC) photovoltaic modules. At 50°C, 30% relative humidity, and −1000 V bias to the solar cells with aluminium foil on the rear glass surface, the rear‐side performance of bifacial PERC modules at standard testing conditions degraded dramatically after 40 hours with a 40.4%, 36.2%, and 7.2% loss in maximum power (Pmpp), short‐circuit current (Isc), and open‐circuit voltage (Voc), respectively. The front‐side standard testing condition performance, on the other hand, showed less degradation; Pmpp, Isc, and Voc dropped by 12.0%, 5.2%, and 5.3%, respectively. However, negligible degradation was observed when the solar cells were positively biased. Based on I‐V characteristics, electroluminescence, external quantum efficiency measurements, and the effective minority‐carrier lifetime simulation, the efficiency loss is shown to be caused by the surface polarization effect; positive charges are attracted to the passivation/antireflection stack on the rear surface and reduce its field effect passivation performance. Extended PID testing to 100 hours showed an increase in device performances (relative to 40 hours) due to the formation of an inversion layer along the rear surface. In addition, replacing ethylene‐vinyl acetate copolymer with polyolefin elastomer films significantly slows down the progression of PID, whereas a glass/transparent backsheet design effectively protects the rear side of bifacial PERC modules from PID. Furthermore, PID on the rear side of bifacial PERC modules is fully recoverable, and light greatly promotes recovery of the observed PID.

show abstract

Steady-state and transient photoconductivity in hydrogenated amorphous silicon nitride films

Cited by 14 publications

References 6 publications

Direct probing of trapped charge dynamics in SiN by Kelvin Force Microscopy

Direct probing of trapped charge dynamics in SiN by Kelvin Force Microscopy

Impact of the charge transport in the conduction band on the retention of Si-nitride based memories

Elucidating potential‐induced degradation in bifacial PERC silicon photovoltaic modules

Contact Info

Product

Resources

About