Steady-state measurement of wafer bonding cracking resistance

Bertholet, Y.; Iker, F.; Raskin, Jean‐Pierre; Pardoen, Thomas

doi:10.1016/j.sna.2003.09.004

Cited by 38 publications

(26 citation statements)

References 11 publications

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“…The second method used was the blade test [15]. The first results obtained gave qualitative indications on the strength of the bonded interfaces and confirmed the qualitative results obtained from the critical pressure necessary to debond the chips.…”

Section: Bonding Strengthsupporting

confidence: 58%

Bonding properties of metals anodically bonded to glass

Briand

Weber

Rooij

2004

Sensors and Actuators A: Physical

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Anodically bonded Pyrex-/Metal double stack were investigated for applications in the sensor encapsulation field. The use of metals can increase the robustness of the packaging and eliminate the use of glue. Titanium anodically bonded to glass can lead to biocompatible systems The anodic bonding of metallic sheets of Invar, Kovar, Alloy 42 and titanium to ion-containing glasses, Pyrex and Foturan, was evaluated in terms of samples preparation, bonding parameters, and bonding characteristics. At a bonding temperature below 300 • C, the stress induced to Pyrex was smaller when the Invar was used, however, a weak bonding was obtained at the lowest bonding temperatures investigated. In comparison with Invar and Alloy 42 bonded to Pyrex, Kovar induced a smaller stress for bonding temperatures higher than 350 • C. For bonding temperatures in between 300 and 350 • C, a similar value of stress was obtained for Kovar and Alloy 42 bonded to Pyrex as well as a high bonding strength. A post-annealing step at a temperature of and higher than the bonding temperature was shown to decrease the bonding stress and can be used to improve the bonding strength of samples bonded at low temperature. Kovar and Alloy 42 bonded to Pyrex at temperatures of and higher than 250 • C were tight to liquid at a pressure of 1.5 bars. In the case of titanium, Pyrex and Foturan were successfully bonded to titanium thin films and sheets, respectively. A proper selection of metals and bonding parameters led to levels of residual stress, strength and tightness that make anodic bonding of metals to glass a suitable technique for the assembling and packaging of microsystems, for instance piezoresistive silicon sensors and microfluidic devices.

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Section: Bonding Strengthsupporting

confidence: 58%

Bonding properties of metals anodically bonded to glass

Briand

Weber

Rooij

2004

Sensors and Actuators A: Physical

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“…[3][4][5][6][7][8][9] In order to obtain the real bonding energy value, the measurement has to be done in anhydrous atmosphere. 8 Indeed as soon as siloxane bonds significantly appear at the bonding interface, during the blade insertion in humid atmosphere, the water corrodes them and the debonding length increases, reducing the apparent bonding energy.…”

Section: Direct Bonding Siloxane Bondsmentioning

confidence: 99%

Water Stress Corrosion in Bonded Structures

Fournel

Martin-Cocher

Radisson

et al. 2015

ECS J. Solid State Sci. Technol.

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Direct bonding is now a well-known technique to join two flat surfaces without any additional material. This technique is used in many applications and especially in SOI (Silicon-On-Insulator) elaboration or in some backside imager manufacturing processes which are now almost in mass production. Direct bonding mechanism study is then very important in order to clearly understand this bonding behavior. Especially in the case of silicon or silicon dioxide hydrophilic surface, the role of water is essential. Water could lead to lots of different reactions at the bonding interface and especially the water stress corrosion could play an important role in the direct bonding mechanism.

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“…Unfortunately, the reaction was reversible at temperatures < 450 • C (Bertholet et al, 2004). Hence, for high bonding quality, the backward reaction that favored the dissociation of the Si O Si bonds should be avoided.…”

Section: Bonding Quality Testing and Evaluationmentioning

confidence: 99%

A low temperature bonding of quartz microfluidic chip for serum lipoproteins analysis

Zhuang

Jin

Liu

et al. 2006

Biomed Microdevices

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A low-temperature bonding method for microfabrication of quartz microfluidic chips has been developed. The bonding process involved two steps: pre-bonding and post-annealing at low temperature. The bonding quality was evaluated by measuring the shear force at bonding interface and the electrical properties of the chips. Shear force of 5.66 MPa (566 N/cm(2)) was obtained in a bonded chip after a post-annealing at 200 degrees C for 6 h. We owe the strong bonding strength to the formation of Si-O-Si bonds at the bonding interface during the post-annealing stage. The bonding procedures were not sensitive to surrounding and could be performed in a routine laboratory without clean room conditions. The performance of the fabricated microfluidic chips was tested by capillary zone electrophoresis (CZE) of serum lipoproteins with laser-induced fluorescence (LIF). The low-density (LDL) and high-density (HDL) lipoproteins in the serum was separated completely by using tricine buffer with methylglucamine.

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Steady-state measurement of wafer bonding cracking resistance

Cited by 38 publications

References 11 publications

Bonding properties of metals anodically bonded to glass

Bonding properties of metals anodically bonded to glass

Water Stress Corrosion in Bonded Structures

A low temperature bonding of quartz microfluidic chip for serum lipoproteins analysis

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