Steady-State Temperature-Sensitive Electrical Parameters’ Characteristics of GaN HEMT Power Devices

Abstract

Gallium nitride high-electron-mobility transistor (GaN HEMT) power devices are favored in various scenarios due to their high-power density and efficiency. However, with the significant increase in the heat flux density, the junction temperature of GaN HEMT has become a crucial factor in device reliability. Since the junction temperature monitoring technology for GaN HEMT based on temperature-sensitive electrical parameters (TSEPs) is still in the exploratory stage, the TSEPs’ characteristics of GaN HEMT have not been definitively established. In this paper, for the common steady-state TSEPs of GaN HEMT, the variation rules of the saturation voltage with low current injection, threshold voltage, and body-like diode voltage drop with temperature are investigated. The influences on the three TSEPs’ characteristics are considered, and their stability is discussed. Through experimental comparison, it is found that the saturation voltage with low current injection retains favorable temperature-sensitive characteristics, which has potential application value in junction temperature measurement. However, the threshold voltage as a TSEP for certain GaN HEMT is not ideal in terms of linearity and stability.

Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors

“…In Figure 8 , the heat flux density of various heat sources is displayed. It can be seen that the heat flux density of the GaN HEMT is three times higher than that of silicon-based IGBTs [ 36 ]. Therefore, in order to enhance the gate stability and reliability of p-GaN gate HEMTs, it is essential to investigate the temperature dependence on V TH instability and its underlying physical mechanisms.…”

“…Therefore, in order to enhance the gate stability and reliability of p-GaN gate HEMTs, it is essential to investigate the temperature dependence on VTH instability and its underlying physical mechanisms. Kaihong Wang et al [36] investigated the variation rules of saturation voltage with low current injection, threshold voltage, and diode voltage drop with temperature for a GaN-HEMT. In Figure 9, the Vth-Tj curves are displayed for various currents.…”

“…It can be seen from the figure that Vth increases with temperature at a constant current. Kaihong Wang et al [36] investigated the variation rules of saturation voltage with low current injection, threshold voltage, and diode voltage drop with temperature for a GaN-HEMT. In Figure 9, the Vth-Tj curves are displayed for various currents.…”

A salivary urea sensor based on a microsieve disposable gate AlGaN/GaN high electron mobility transistor

“…30,31 Among FET-based biosensors, the AlGaN/GaN high electron mobility transistor (HEMT) is particularly favored for biosensing due to its non-toxic nature, compatibility with biological systems, and stability in various chemical environments. 32–36 The exceptional responsiveness of the highly sensitive two-dimensional electron gas (2DEG), located near the surface of the AlGaN/GaN HEMT sensor, enables effective detection of changes in surface potential. 37–45 Recent applications have successfully demonstrated the use of AlGaN/GaN HEMT sensors in detecting proteins (biomarkers/antigens), 37,42 ions, 43,44,46 DNA hybridization events, 47,48 and pH levels 38,40,45 within solution or serum samples.…”