Step and flash imprint lithography for quantum dots based room temperature single electron transistor fabrication

Cheam, Daw Don; Karre, P.S.K.; Palard, Marylene; Bergstrom, Paul L.

doi:10.1016/j.mee.2008.12.094

Cited by 13 publications

(7 citation statements)

References 6 publications

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“…Beyond ±0.5 V SD , there are fractional nA source-drain current changes in response to illumination. This device was fabricated early in the research project and is very similar to those previously reported [25,26]. The device used in the results shown in Figure 7 was fabricated much later and is similar to those reported [27].…”

Section: Set-br Integration Resultssupporting

confidence: 60%

Light Sensor Platform Based on the Integration of Bacteriorhodopsin with a Single Electron Transistor

Walczak

Bergstrom

Friedrich

2011

Active and Passive Electronic Components

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This paper reports on the integration of an optical protein with single electron transistors to form a nano-bio-hybrid device for sensing. Bacteriorhodopsin (bR) is an optoelectric protein that translocates a proton across a distance of several nanometers in response to an absorbed photon of incident light. This charge gradient results in a measurable voltage in the dried state. Single electron transistors (SETs) have active regions consisting of one or more quantum islands with a size typically 10 nanometers or less. Integrating bacteriorhodopsin with the gate of a SET provides a device capable of a modulated electrical output in response to optical modulation at the device gate. Modulation of the optoelectric activity of the bR by chemical binding with a targeted environmental antigen can form a direct chemical-to-electrical sensor reducing the size and complexity of fluorescence-based systems. The work resulted in electrical resistance and capacitance characterization of purple membrane containing bR under variable illumination to ensure minimal impact on SET operation. Purple membrane containing bacteriorhodopsin was electrodeposited on the SET gates, and current throughput was well correlated with variable and cyclic illumination. It was confirmed that bR optoelectric activity is capable of driving SETs.

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Section: Set-br Integration Resultssupporting

confidence: 60%

Light Sensor Platform Based on the Integration of Bacteriorhodopsin with a Single Electron Transistor

Walczak

Bergstrom

Friedrich

2011

Active and Passive Electronic Components

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“…NIL has also been successfully applied in the fabrications of organic nanoelectronics [96][97][98][99][100][101], photovoltaic devices with Si nanowires [102], single-electron memory device [103], organic [97] and inorganic nonvolatile memory [104], single-electron transistors [105,106] and poly-Si TFTs [107], etc. According to the physical characteristics of nanoimprint, this technique should find particular prospects for flexible nanoelectronics in which highly conductive polymers are demanded to be developed as the main materials for the devices and circuits.…”

Section: Nil For T-shape Gates and Hemtsmentioning

confidence: 99%

Applications of nanoimprint lithography/hot embossing: a review

Chen

2015

Appl. Phys. A

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This review concentrates on the applications of nanoimprint lithography (NIL) and hot embossing for the fabrications of nanolectronic devices, nanophotonic metamaterials and other nanostructures. Technical challenges and solutions in NIL such as nanofabrication of templates, removal of residual resist, pattern displacement in thermal NIL arising from thermal expansion are first discussed. In the nanofabrication of templates, dry etch in plasma for the formation of multi-step structures and ultra-sharp tip arrays in silicon, nanophotonic chiral structures with high aspect ratio in SiC are demonstrated. A bilayer technique for nondestructive removal of residual resist in thermal NIL is described. This process is successfully applied for the fabrication of T-shape gates and functional high electron mobility transistors. However, pattern displacement intrinsically existing in thermal NIL/hot embossing owing to different thermal expansions in the template and substrate, respectively, limits its further development and scale-up. Low temperature even room temperature NIL (RTNIL) was then proposed on HSQ, trying to eliminate the pattern distortion by avoiding a thermal loop in the imprint. But, considerable pressure needed in RTNIL turned the major attentions to the development of UVcuring NIL in UV-curable monomers at low temperature. A big variety of applications by low-temperature UV-curing NIL in SU-8 are described, including high-aspect-ratio phase gratings, tagging technology by nanobarcode for DNA sequencing, nanofluidic channels, nanophotonic metamaterials and biosensors. Hot embossing, as a parallel technique to NIL, was also developed, and its applications on ferroelectric polymers as well as metals are reviewed. Therefore, it is necessary to emphasize that this review is mainly attempted to review the applications of NIL/embossing instead of NIL technique advances.

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“…4 Specifically, competitive nets, like winner-take-all (WTA), provide easiness of operation due to their non-supervised training. 5 Although single-electron devices operating at room temperature have already been built, [6][7][8][9] it is still a challenge to propose, simulate and build more complex single-electron circuits operating properly at 300 K. 10,11 For example, a SET-WTA circuit has already been proposed. [12][13][14] This circuit was simulated for static inputs and was robust against effects such as offset charges.…”

Section: Introductionmentioning

confidence: 99%

A Modified Nanoelectronic Winner-Take-All Circuit for Room Temperature Operation

Guimarães¹,

Costa²

2011

Jnl of Comp & Theo Nano

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Step and flash imprint lithography for quantum dots based room temperature single electron transistor fabrication

Cited by 13 publications

References 6 publications

Light Sensor Platform Based on the Integration of Bacteriorhodopsin with a Single Electron Transistor

Light Sensor Platform Based on the Integration of Bacteriorhodopsin with a Single Electron Transistor

Applications of nanoimprint lithography/hot embossing: a review

A Modified Nanoelectronic Winner-Take-All Circuit for Room Temperature Operation

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