Step and Flash Imprint of Fluorinated Silicon-Containing Resist Materials for Three-Dimensional Nanofabrication

Abstract

Advanced fabrication of multiple-level three-dimensional nanostructures by step and flash nanoimprint lithography was studied. This study has been shown to be applicable to future nanofabrication endeavors in the industrial production of electronic devices and optical materials. Step and flash nanoimprint technologies using the newly fluorinated silicon-containing resist materials to prevent resist pattern collapse, contamination problem of the quartz template, and defect problems were demonstrated. High-quality nanoimprint patterning of 65 nm dense lines and other multiple-level three-dimensional nanostructures was achieved using the proposed material design and under ultraviolet nanoimprint conditions. The developed fluorinated silicon-containing resist material as a hard mask layer with a nonsilicon spin-on carbon material was found to be useful in producing high-aspect-ratio patterned structures by step and flash nanoimprint lithography.

A “thiol-ene” photo-curable hybrid fluorinated resist for the high-performance replica mold of nanoimprint lithography (NIL)

“…Although such materials present good fidelity for patterning nano-structures, they still face some challenges. For example, it is still inevitable that an acrylate-based hybrid resist will form edge defects of the pattern due to the inherent flaws in oxygen inhabitation, 34,37 and the heat-induced yellowing of the epoxy-based resins can decrease the transparency of the replica mold. 36 In our last work, 38 POSS containing mercaptopropyl (POSS-SH) was synthesized and incorporated into a methacrylate system to form a hybrid network polymer via the thiol-ene ''click chemistry'' reaction.…”

Large Area, Facile Oxide Nanofabrication via Step-and-Flash Imprint Lithography of Metal–Organic Hybrid Resins

“…The resin is then photo-polymerized by exposing it to UV light through the transparent template, resulting in the formation of rigid imprinted features. In terms of fully organic resins, the photo-polymerizable monomers used in S-FIL are typically either acrylate- or vinyl ether-based formulations, with the former more popular than the latter due to easy availability of inexpensive monomers. − …”

Development of Ultraviolet Crosslinking Glucose-Based Resist Materials for Advanced Electronic Device Applications Using Nanoimprint Lithography

“…The continuous resolution capability of advanced lithography requires constant improvements in the industrial production of many semiconductors, hard disk drive storage devices, and micro-electromechanical systems (MEMS). In relation to these improvements, new resist materials [1][2][3][4][5] are required in addition to resist underlayer materials, a patterning tool, and a lithographic process.…”