Step bunching phenomena on Si(0 0 1) surface induced by DC heating during sublimation and Si deposition

Quantifying the Effect of Step–Step Exclusion on Dynamically Unstable Vicinal Surfaces: Step Bunching without Macrostep Formation

“…Recently it was found that both current directions across the steps can bunch the W(110) vicinal surface at 1500 °C. surface of an insulator, Al 2 O 3 , 22,34 and recently on Si(001) 31 where, in contrast to previous studies, 28−30 bunching induced at the same temperature by step-up and step-down driving force was observed.…”

“…Summarizing the above, it can be seen that SB is induced by both step-up and step-down external biases, but the process happens at different ranges of adatom concentrations, and the observed SU-induced bunches are less developed than the SD-induced ones. Experimentally, it is also observed that the height of SU-induced bunches is lower for several systems where both SU and SD biases can destabilize the surface. ,, Therefore, the step–step repulsive interaction influences the bunching process in completely different way for SD and SU biases. Below we will continue to analyze the character of the SB in both cases.…”

“…Experimentally, it is also observed that the height of SU-induced bunches is lower for several systems where both SU and SD biases can destabilize the surface. 21,22,31 Therefore, the step−step repulsive interaction influences the bunching process in completely different way for SD and SU biases. Below we will continue to analyze the character of the SB in both cases.…”

“…In this context, different materials are studied, such as CH 3 NH 3 PbI 3 , GaN, − AlN, AlGaN, SiC, − graphene, , PTCDA/Ag, W, , SrRuO 3 /(001) SrTiO 3 , KDP, − Si, − ferritin, diamond, and Al 2 O 3 . , The phenomenon of destabilization by both step-down (SD) and step-up (SU) direct currents of Si(111) vicinals was first observed by Latyshev et al on sublimating Si(111) surfaces and it was further shown based on the Burton–Cabrera–Frank (BCF) type of modeling that the directional asymmetry (bias) in the diffusion of the partially charged surface adatoms makes the motion of the steps from the vicinal surface unstable. − The phenomenon of SB was investigated actively in the following years by experimental techniques − as well as theoretically − and numerically. − …”

Dynamic Interaction of Steps and Nanoislands during Growth of a Multicomponent Crystal

“…A deep understanding of all of the effects and phenomena that occur during their growth is required to obtain high-quality crystals. A colossal theoretical groundwork − devoted to various phenomena on the surface of crystals: nucleation of islands, growth of nanowires, motion of steps, and other effects − describes mainly single-component systems. Many gaps exist in the theory of the growth of multicomponent crystals.…”