Step-Flow Growth of Fluorescent 4H-SiC Layers on 4 Degree Off-Axis Substrates

Schimmel, Saskia; Kaiser, Michl; Hens, Philip; Jakubavicius, Valdas; Liljedahl, Rickard; Sun, Jianwu; Yakimova, Rositza; Ou, Yi; Ou, Haiyan; Linnarsson, Margareta K.; Wellmann, Peter J.; Syväjärvi, Mikael

doi:10.4028/www.scientific.net/msf.740-742.185

Cited by 3 publications

(2 citation statements)

References 7 publications

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“…Scientists have also developed f-SiC via PVT method. 50,52,53,67 The growth of the fluorescent 4H-SiC single crystal by PVT process has been reported by Liu et al 52 In this process, 3-inch diameter and 300-μm thick 4H-SiC crystals are grown in the temperature range of 2040 under 325 nm laser source at room temperature and 4 K, as shown in Figure 9. From the PL measurements of the two samples at room temperature, as shown in Figure 9A, wide emission spectra from 450 to 750 nm centered at 528 nm have been observed for SA-4H, but in the case of SA-6H, narrower spectra (520-750 nm) with peak wavelength at 590 nm have been obtained.…”

Section: Physical Vapor Transport Methodsmentioning

confidence: 91%

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White light emission of wide‐bandgap silicon carbide: A review

et al. 2022

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White light-emitting diodes (LEDs) are the most promising alternative to the conventional lighting sources due to their high efficacy and energy saving in illumination. Silicon carbide (SiC) has a wide optical bandgap and could be tailored to emit light at different wavelengths across the entire visible spectrum by introducing different dopants. Donor and acceptor (DA) co-doped fluorescent SiC (f-SiC) is a potential candidate for replacing phosphor material in white LEDs, as it has been observed as a good wavelength converter overcoming the disadvantages of rare earth-containing phosphors, such as poor color-rendering index (CRI), short lifetime, and short degradation time. The current study attempts to present an overview on the available approaches to fabricate f-SiC for generating the white light emission and challenges in fundamental research issues to enhance quantum efficiency, color rendering performance, stability, reproducibility of color quality, and lifetime of f-SiC.

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Section: Physical Vapor Transport Methodsmentioning

confidence: 91%

“…Scientists have also developed f‐SiC via PVT method 50,52,53,67 . The growth of the fluorescent 4H‐SiC single crystal by PVT process has been reported by Liu et al 52 .…”

Section: Fabrication and Doping Methods Of F‐sic With Photoluminescen...mentioning

confidence: 98%

White light emission of wide‐bandgap silicon carbide: A review

et al. 2022

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Photoluminescence properties of N and B codoped fluorescent 4H-SiC and 6H-SiC single crystals

et al. 2018

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In this paper, N and B codoped 4H-SiC and 6H-SiC single crystals were prepared by physical vapour transport method and their photoluminescence properties were studied. The photoluminescence spectra, dopant concentrations, Raman spectra, and transmission spectra of these obtained crystals were characterized. It is observed that the fluorescent crystals radiate a warm white light that covers a wide band spectrum from 450 nm to 750 nm when they are excited by a 325 nm laser. The doped 4H-SiC single crystal presents a higher photoluminescence intensity and larger spectral band compared to that of doped 6H-SiC single crystal under the similar growth and measurement conditions. Further analyze by doping concentration and transmission spectra indicate that the photoluminescence property is strongly influenced by the N donor and B acceptor impurity level.

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Advances in wide bandgap SiC for optoelectronics

Argyraki

et al. 2014

Eur. Phys. J. B

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Step-Flow Growth of Fluorescent 4H-SiC Layers on 4 Degree Off-Axis Substrates

Cited by 3 publications

References 7 publications

White light emission of wide‐bandgap silicon carbide: A review

White light emission of wide‐bandgap silicon carbide: A review

Photoluminescence properties of N and B codoped fluorescent 4H-SiC and 6H-SiC single crystals

Advances in wide bandgap SiC for optoelectronics

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