Step-Flow Homoepitaxial Growth of Zinc Oxide Semiconductor Thin Films with A Vapor-Growth Method

Nishinaka, Hiroyuki; Fujita, Shizυo

doi:10.2472/jsms.59.675

J. Soc. Mat. Sci., Japan

2010

DOI: 10.2472/jsms.59.675

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Step-Flow Homoepitaxial Growth of Zinc Oxide Semiconductor Thin Films with A Vapor-Growth Method

Hiroyuki Nishinaka¹,

Shizυo Fujita²

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2015

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Fabrication of Cu2ZnSnS4 Thin Films by Ultrasonic-Atomized Mist Methods

Shibayama¹,

Kaneko²,

Fujita³

2015

J. Soc. Mat. Sci., Japan

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CZTS) thin films, which are promising for thin-film solar cells with abundant elements, have been fabricated by a simple and cost-effective technique of ultrasonic-atomized mist deposition method. The residual oxygen impurity was removed by successive mist sulfurization technique. The films hence obtained exhibited almost stoichiometric composition of CZTS together with optical bandgap energy of 1.44 eV.

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Fabrication of Cu2ZnSnS4 Thin Films by Ultrasonic-Atomized Mist Methods

Shibayama¹,

Kaneko²,

Fujita³

2015

J. Soc. Mat. Sci., Japan

View full text Add to dashboard Cite

show abstract

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Step-Flow Homoepitaxial Growth of Zinc Oxide Semiconductor Thin Films with A Vapor-Growth Method

Cited by 1 publication

References 17 publications

Fabrication of Cu<sub>2</sub>ZnSnS<sub>4</sub> Thin Films by Ultrasonic-Atomized Mist Methods

Fabrication of Cu<sub>2</sub>ZnSnS<sub>4</sub> Thin Films by Ultrasonic-Atomized Mist Methods

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