Step-step interaction on vicinal Si(001) surfaces studied by scanning tunneling microscopy

Persichetti, Luca; Sgarlata, A.; Fanfoni, M.; Bernardi, Marco; Balzarotti, A.

doi:10.1103/physrevb.80.075315

Cited by 19 publications

(6 citation statements)

References 41 publications

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“…The relevant angles of a vicinal surface are the miscut polar angle θ and the azimuthal angle φ (figure 20). Tanθ gives the density of steps and tanϕ the density of kinks on the step edge [63]. Below we will restrict ourselves to vicinal surfaces with φ = 0 for which the density of kinks is minimal.…”

Section: Shaping the Morphology By Substrate Miscutmentioning

confidence: 99%

Heteroepitaxy of Ge on singular and vicinal Si surfaces: elastic field symmetry and nanostructure growth

Persichetti

Sgarlata

Fanfoni

et al. 2015

J. Phys.: Condens. Matter

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Starting with the basic definition, a short description of a few relevant physical quantities playing a role in the growth process of heteroepitaxial strained systems, is provided. As such, the paper is not meant to be a comprehensive survey but to present a connection between the Stranski-Krastanov mechanism of nanostructure formation and the basic principles of nucleation and growth. The elastic field is described in the context of continuum elasticity theory, using either analytical models or numerical simulations. The results are compared with selected experimental results obtained on GeSi nanostructures. In particular, by tuning the value of quantities such as vicinality, substrate orientation and symmetry of the diffusion field, we elucidate how anisotropic elastic interactions determine shape, size, lateral distribution and composition of quantum dots.

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Section: Shaping the Morphology By Substrate Miscutmentioning

confidence: 99%

Heteroepitaxy of Ge on singular and vicinal Si surfaces: elastic field symmetry and nanostructure growth

Persichetti

Sgarlata

Fanfoni

et al. 2015

J. Phys.: Condens. Matter

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“…Indeed, the average step separation falls significantly between 0 and 2 of miscut, passing from 94 to 6.8 nm. 17 The high step density plays a pivotal role in determining the distinctive path of Ge growth on vicinal surfaces, as step periodicity sets a length scale for surface diffusion. The effective Ge diffusion length can be estimated as…”

Section: Early Stages Of Ge Growth On the 4 -Miscut Si(001) Surfacementioning

confidence: 99%

Ge Growth on Vicinal Si(001) Surfaces: Island's Shape and Pair Interaction versus Miscut Angle

Persichetti

Sgarlata²,

Fanfoni³

et al. 2011

J. Nanosci. Nanotech.

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A complete description of Ge growth on vicinal Si(001) surfaces is provided. The distinctive mechanisms of the epitaxial growth process on vicinal surfaces are clarified from the very early stages of Ge deposition to the nucleation of 3D islands. By interpolating high-resolution scanning tunneling microscopy measurements with continuum elasticity modeling, we assess the dependence of island's shape and elastic interaction on the substrate misorientation. Our results confirm that vicinal surfaces offer an additional degree of control over the shape and symmetry of self-assembled nanostructures.

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“…Indeed, the effective stiffness is related to the inplane-autocorrelation function ) ( x g y along the step edges at small separation x (see Fig. 4), which reads [36,37]:…”

Section: -Effective Stiffnessmentioning

confidence: 99%

Competing growth processes induced by next-nearest-neighbor interactions: Effects on meandering wavelength and stiffness

et al. 2017

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Abstract:In this paper we explore the meandering instability of vicinal steps with a kinetic Monte Carlo simulations (kMC) model including the attractive next-nearest neighbor (NNN) interactions. kMC simulations show that increase of the NNN interaction strength leads to considerable reduction of the meandering wavelength and to weaker dependence of the wavelength on the deposition rate F. The dependences of the meandering wavelength on the temperature and the deposition rate obtained with simulations are in good quantitative agreement with the experimental result on the meandering instability of Cu (0 2 24 (2001)]. The effective step stiffness is found to depend not only on the strength of NNN interactions and the Ehrlich-Schwoebel barrier, but also on F. We argue that attractive NNN interactions intensify the incorporation of adatoms at step-edges and enhance step roughening. Competition between NNN and NN interactions results in a 'new form' of meandering instability which we call "roughening-limited" growth, rather than attachment-detachment limited growth that governs the Bales-Zangwill (BZ) instability. The computed effective wavelength and the effective stiffness behave as:

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Step-step interaction on vicinal Si(001) surfaces studied by scanning tunneling microscopy

Cited by 19 publications

References 41 publications

Heteroepitaxy of Ge on singular and vicinal Si surfaces: elastic field symmetry and nanostructure growth

Heteroepitaxy of Ge on singular and vicinal Si surfaces: elastic field symmetry and nanostructure growth

Ge Growth on Vicinal Si(001) Surfaces: Island's Shape and Pair Interaction versus Miscut Angle

Competing growth processes induced by next-nearest-neighbor interactions: Effects on meandering wavelength and stiffness

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