Step structure on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">GaAs</mml:mi><mml:mn /><mml:mo>(</mml:mo><mml:mn>113</mml:mn><mml:mo>)</mml:mo><mml:mi>A</mml:mi></mml:math>studied by scanning tunneling microscopy

Geelhaar, Lutz; Márquez, Juan Carlos Parra; Jacobi, K.

doi:10.1103/physrevb.60.15890

Cited by 23 publications

(22 citation statements)

References 40 publications

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“…16 More recent STM studies confirmed the lateral periodicity of the (311)A GaAs surface and the two monolayer step height at room temperature. 17 Since the corrugation height of two monolayers was observed, 15 most of the researchers came to the conclusion that the interface corrugation of GaAs-AlAs superlattices on a (311)A GaAs surface is either absent 18 or very weak (not more than 2 MLs) 19 and, moreover, only the inverted (GaAs on AlAs) interface is corrugated, while the normal (AlAs on GaAs) interface is intermixed. 20 Optical anisotropy in (311)A-grown GaAs-AlAs superlattices was attributed to intrinsic anisotropy of the (311) surface 21 and it was proposed that the "corrugation modifies the density of states only slightly, giving no evidence of a quantum-wire behavior".…”

Section: Interface Structure and Growth Mode Of Quantum Wire And Quanmentioning

confidence: 98%

Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces

Ledentsov

Litvinov

Rosenauer

et al. 2001

Journal of Elec Materi

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Section: Interface Structure and Growth Mode Of Quantum Wire And Quanmentioning

confidence: 98%

Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces

Ledentsov

Litvinov

Rosenauer

et al. 2001

Journal of Elec Materi

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“…Considering the possible anisotropy on the GaAs ͑311͒ surface, such as the 1D corrugation structure along the ͓2 33͔ direction reported previously, 19,20 we compared the photocurrent along the ͓011 ͔ direction and two diagonal directions with respect to ͓2 33͔ and ͓011 ͔. Under our experimental condition, the current difference between these directions is less than 10%, which we can not exclusively ascribe to the microstructural anisotropy of the GaAs (311)B surface.…”

Section: Resultsmentioning

confidence: 92%

In-plane photocurrent of self-assembledInxGa1−xAs

et al. 2001

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On self-assembled In x Ga 1Ϫx As/GaAs͑311͒B quantum dots ͑QD's͒, photocurrent in the plane of QD arrays was measured under irradiation with wavelengths longer than 850 nm ͑1.46 eV͒. A sample with rather inhomogeneous QD sizes shows hopping conduction, indicating the localization of carriers in individual QD's. A two-dimensional QD superlattice, consisting of highly ordered and homogeneously sized QD's, exhibits negative differential conductance ͑NDC͒, i.e., photocurrent decrease with increasing applied voltage, in a limited electric-field range. The pre-NDC conduction is argued to arise from the miniband, which is evidenced by the photoluminescence, while the post-NDC conduction is found to be hopping as in a localized QD system, suggesting a miniband destruction under an in-plane electric field as low as ϳ10 3 V cm Ϫ1 . The miniband transport is likely controlled by two-dimensional acoustic-phonon scattering.

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“…After the first observation, RHEED oscillations were reported in many other material systems such as GaAs (3 1 1) which were believed to be faceted surfaces [11]. However, all recent research has confirmed that GaAs(3 1 1)A and GaAs(3 1 1)B are stable, nonfaceted surfaces [12][13][14]. Meanwhile, GaAs(3 3 1)B is known to be faceted into (1 1 0) and (1 1 1)B [13].…”

Section: Introductionmentioning

confidence: 95%