Stepwise growth of crystalline MoS<sub>2</sub> in atomic layer deposition

Cho, Ah-Jin; Ryu, Seung Ho; Yim, Jae-Gyun; Baek, In‐hwan; Pyeon, Jung Joon; Won, Sung Ok; Baek, Seung‐Hyub; Kang, Chong Yun; Kim, Seong Keun

doi:10.1039/d2tc01156e

Cited by 8 publications

(5 citation statements)

References 32 publications

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“…(c) Raman spectra of the MoS 2 obtained at positions indicated in b. (d) HRTEM image of 500-cycle-ALD-grown MoS 2 /SiO 2 /Si . Reproduced with permission from ref .…”

Section: The Ald Growth Strategy and Processes For The Synthesis Of Tmdsmentioning

confidence: 99%

Section: The Ald Growth Strategy and Processes For The Synthesis Of Tmdsmentioning

confidence: 99%

“…Cho et al 78 also synthesized MoS 2 using ALD, incorporating additional injection of remote H 2 plasma at a higher growth temperature of 650 °C to promote the surface migration of adsorbed atoms. The use of inorganic precursors such as molybdenum(V) chloride (MoCl 5 ) with a high decomposition temperature enabled the achievement of such elevated growth temperatures.…”

Section: Pe-ald Growth Of Tmd Filmsmentioning

confidence: 99%

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Atomic Layer Deposition of Transition-Metal Dichalcogenides

Li,

Zhao,

et al. 2024

Crystal Growth & Design

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transition metal sulfides (TMDs) semiconductors, represented by MoS 2 , are regarded as promising candidates to advance Moore's law in the postsilicon semiconductor era, as they possess the advantages of high carrier mobility, high switching ratios, tunable bandgap, and atomic-level thickness, as well as combining with good mechanical properties. The exploration of high-quality large-area 2D materials is crucial for investigating new physical phenomena and further extending their applications in microelectronics and optoelectronics. Among the techniques for producing high-quality 2D materials, atomic layer deposition (ALD) stands out as a self-limiting surface chemical reaction-based method. It offers more advantages in terms of step coverage, wafer size uniformity, and controllable stoichiometric ratio, which is expected to overcome the bottleneck in the utilization of 2D materials in optoelectronic integrated devices and future large-scale applications. In this paper, we provide an overview of the structure and properties of TMDs, and then focus on the latest progress in the ALD-based preparation of TMD thin films. Key factors influencing the film quality are discussed, and we conclude by discussing the potential future development trends in this field.

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“…(c) Raman spectra of the MoS 2 obtained at positions indicated in b. (d) HRTEM image of 500-cycle-ALD-grown MoS 2 /SiO 2 /Si . Reproduced with permission from ref .…”

Section: The Ald Growth Strategy and Processes For The Synthesis Of Tmdsmentioning

confidence: 99%

Section: The Ald Growth Strategy and Processes For The Synthesis Of Tmdsmentioning

confidence: 99%

Section: Pe-ald Growth Of Tmd Filmsmentioning

confidence: 99%

See 1 more Smart Citation

Atomic Layer Deposition of Transition-Metal Dichalcogenides

Li,

Zhao,

et al. 2024

Crystal Growth & Design

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show abstract

“…3. In contrast, a substrate with a different crystal structure can either result in a lower degree of crystallinity due to the formation of defects and mismatched interfaces [66] or trigger the formation of a different crystalline structure of the deposited film. [67,68]…”

Section: Lattice Matchingmentioning

confidence: 99%

Interfaces in Atomic Layer Deposited Films: Opportunities and Challenges

Zaidi,

Park,

Han

et al. 2023

Small Science

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Atomic layer deposition (ALD) is an effective method for precise layer‐wise growth of thin‐film materials and has allowed for substantial progress in a variety of fields. Advances in the technique have instigated high‐level interpretations of the relationship between nanostructure architecture and performance. An inherent part in the ALD of films is the underlying interfaces between each material, which plays a significant role in advanced electronics. Considering the impact of sandwiched substructures, it is appropriate to highlight opportunities and challenges faced by applications that rely on these interfaces. This review encompasses the current prospects and obstacles to further performance improvements in ALD‐generated interfaces. 2D electron gas, high‐k materials, freestanding layered structures, lattice matching, and seed layers, as well as prospects for future research, are explored.

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“…Amorphous, optically inactive MoS 2 can be grown by ALD at temperatures as low as 100 • C [15,16]. Most of the ALD-grown MoS 2 layers are reported to not show photoluminescence (PL) [17,18], need subsequent annealing at high temperature to obtain PL [19] or no information on the PL properties is given [20][21][22][23][24][25]. It is expected that the growth temperature is the limiting factor responsible for the PL inactivity of ALD grown MoS 2 .…”

Section: Introductionmentioning

confidence: 99%

Atomic vs. sub-atomic layer deposition: impact of growth rate on the optical and structural properties of MoS₂ and WS₂

Tessarek,

Grieb,

Krause

et al. 2024

2D Mater.

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MoS2 and WS2 mono- and multilayers were grown on SiO2 /Si substrates. Growth by atomic layer deposition at fast growth rates is compared to sub-atomic layer deposition, which is a slow growth rate process with only partial precursor surface coverage per cycle. A Raman spectroscopic analysis of the intensity and frequency difference of the modes reveals different stages of growth from partial to full surface layer coverage followed by layer-by-layer formation. The initial layer thickness and structural quality strongly depends on the growth rate and monolayers only form using sub-atomic layer deposition. Optical activity is demonstrated by photoluminescence characterisation which shows typical excitonic emission from MoS2 and WS2 monolayers. A chemical analysis confirming the stoichiometry of MoS2 is performed by X-ray photoelectron spectroscopy. The surface morphology of layers grown with different growth rates is studied by atomic force microscopy. Plan-view transmission electron microscopy analysis of MoS2 directly grown on freestanding graphene reveals the local crystalline quality of the layers, in agreement with Raman and photoluminescence results.

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Stepwise growth of crystalline MoS₂ in atomic layer deposition

Abstract: Atomic layer deposition (ALD) is considered a promising growth technique for transition metal dichalcogenides (TMDCs) because it ensures uniformity and homogeneity of the TMDC grains. However, the poor crystallinity of...

Cited by 8 publications

References 32 publications

Atomic Layer Deposition of Transition-Metal Dichalcogenides

Atomic Layer Deposition of Transition-Metal Dichalcogenides

Interfaces in Atomic Layer Deposited Films: Opportunities and Challenges

Atomic vs. sub-atomic layer deposition: impact of growth rate on the optical and structural properties of MoS₂ and WS₂

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Stepwise growth of crystalline MoS2 in atomic layer deposition

Abstract: Atomic layer deposition (ALD) is considered a promising growth technique for transition metal dichalcogenides (TMDCs) because it ensures uniformity and homogeneity of the TMDC grains. However, the poor crystallinity of...

Cited by 8 publications

References 32 publications

Atomic Layer Deposition of Transition-Metal Dichalcogenides

Atomic Layer Deposition of Transition-Metal Dichalcogenides

Interfaces in Atomic Layer Deposited Films: Opportunities and Challenges

Atomic vs. sub-atomic layer deposition: impact of growth rate on the optical and structural properties of MoS2 and WS2

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Product

Resources

About

Stepwise growth of crystalline MoS₂ in atomic layer deposition

Atomic vs. sub-atomic layer deposition: impact of growth rate on the optical and structural properties of MoS₂ and WS₂