Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack

Li, Xiuyan; Toriumi, Akira

doi:10.1038/s41467-020-15753-4

Cited by 15 publications

(15 citation statements)

References 41 publications

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“…One can see that internal voltage amplifications (δ V int /δ V G > 1) can be observed in both sweeping directions in the I D – V G scan. Note that although direct measurement methods of the internal gate voltage V int during the I D – V G scan exist, previous studies , have pointed out that a voltage measurement system with input impedance much larger than the leakage resistances of the capacitors is required to accurately measure these voltages, which is not available in our measurement system. Therefore, we have adopted the strategy of indirectly extracting V int from the measured I D .…”

Section: Resultsmentioning

confidence: 99%

“…Different from the original proposal, alternative mechanisms for the observed steep slope switching have been proposed and the validity of a stabilizing negative capacitance (NC) region of FE materials has been challenged [11][12][13] . For example, some papers relate the observed steep switching to transient effects such as internal potential jumps 14,15 or differential voltage amplification caused by polarization switching of FE material [16][17][18][19][20][21][22] , instead of a quasi-static NC effect represented as the "S"-shaped curve in the polarization-electric field (P-E) relation of FE materials 1,23,24 .…”

mentioning

confidence: 99%

“…1,22,23 Other explanations include domain nucleation and growth in multidomain FE materials. 15,24,25 Yet due to the complexity of both the ferroelectric physics and the experimental systems, there has not been a single consolidated theory that can convincingly explain all the experimental findings. Therefore, a model system exhibiting similar device characteristics yet with simplified physics is highly sought after.…”

mentioning

confidence: 99%

“…Since then, sub-60 mV/decade operations have been reported in NC-FETs from various material systems and device structures. − However, the origin of the observed steep-slope switching is still under intense debate. Different from the original proposal, alternative mechanisms for the observed steep slope switching have been proposed, and the validity of a stabilizing negative capacitance (NC) region of FE materials has been challenged. − For example, some papers relate the observed steep switching to transient effects such as internal potential jumps , or differential voltage amplification caused by polarization switching of the FE material, − instead of a quasi-static NC effect represented as the “S”-shaped curve in the polarization–electric field ( P – E ) relation of FE materials. ,, Other explanations include domain nucleation and growth in multidomain FE materials. ,, Yet due to the complexity of both the ferroelectric physics and the experimental systems, there has not been a single consolidated theory that can convincingly explain all the experimental findings. Therefore, a model system exhibiting similar device characteristics yet with simplified physics is highly sought after.…”

mentioning

confidence: 99%

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Artificial Sub-60 Millivolts/Decade Switching in a Metal–Insulator–Metal–Insulator–Semiconductor Transistor without a Ferroelectric Component

Appenzeller

2021

ACS Nano

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Negative capacitance field-effect transistors (NC-FETs) have attracted wide interest as promising candidates for steep-slope devices, and sub-60 mV/decade switching has been demonstrated in NC-FETs with various device structures and material systems. However, the detailed mechanisms of the observed steep-slope switching in some of these experiments are under intense debate. Here we show that sub-60 mV/decade switching can be observed in a WS2 transistor with a metal-insulator-metal-insulatorsemiconductor (MIMIS) structure -without any ferroelectric component. This structure resembles an NC-FET with internal gate, except that the ferroelectric layer is replaced by a leaky dielectric layer.Through simulations of the charging dynamics during the device characterization using an RC network model, we show that the observed steep-slope switching in our "ferroelectric-free" transistors can be attributed to the internal gate voltage response to the chosen varying gate voltage scan rates. We further show that a constant gate voltage scan rate can also lead to transient sub-60 mV/decade switching in an MIMIS structure with voltage dependent internal gate capacitance. Our results indicate that the observation of sub-60 mV/decade switching alone is not sufficient evidence for the successful demonstration of a true steep-slope switching device and that experimentalists need to critically assess their measurement setups to avoid measurement-related artefacts.

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Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Artificial Sub-60 Millivolts/Decade Switching in a Metal–Insulator–Metal–Insulator–Semiconductor Transistor without a Ferroelectric Component

Appenzeller

2021

ACS Nano

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“…Most recently, Li et al reported a stepwise internal potentialjump phenomenon in measuring the DC voltage applied to the capacitor in a series connection with a metal/PZT/metal FE capacitor [94]. They claimed that the accuracy of their measurement setup is optimized by increasing the equivalent resistance of the voltmeter (Fig.…”

Section: Possible Origins Of Steep Ssmentioning

confidence: 99%

Current Prospects and Challenges in Negative-Capacitance Field-Effect Transistors

Islam

Mazumder

Zhou

et al. 2023

IEEE J. Electron Devices Soc.

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For decades, the fundamental driving force behind energy-efficient and cost-effective electronic components has been the downward scaling of electronic devices. However, due to approaching the fundamental limits of silicon-based complementary metal-oxide-semiconductor (CMOS) devices, various emerging materials and device structures are considered alternative aspirants, such as negative-capacitance field-effect transistors (NCFETs), for their promising advantages in terms of scaling, speed, and power consumption. In this article, we present a brief overview of the progress made on NCFETs, including theoretical and experimental approaches, a current understanding of NCFET device physics, possible physical mechanisms for NC, and future functionalization prospects. In addition, in the context of recent findings, critical technological difficulties that must be addressed in the NCFET development are also discussed.

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Stuffed Tridymite Structures: Synthesis, Structure, Second Harmonic Generation, Optical, and Multiferroic Properties

Bhim

Sutter

Gopalakrishnan

et al. 2021

Chemistry A European J

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The stuffed tridymite structure Ba(Zn/Co)1−xSi1−xM2xO4 (M=Al3+ and Fe3+) is explored for the possible multiferroic behavior and to develop new inorganic colored materials. The compounds were synthesized by employing conventional solid‐state chemistry methods in the temperature range 1100–1175 °C for 24 h. The powder X‐ray diffraction (PXRD) and Rietveld refinement studies indicate that the compounds stabilize in the P63 space group (no. 173). The refinement results were also rationalized by employing Raman spectroscopic studies. The compounds were found to be second harmonic generation (SHG) active and show weak ferroelectric behavior. The co‐substitution of Co2+ and Fe3+ in the structure gives rise to a weak ferromagnetic behavior to the compound, BaCo0.75Si0.75Fe0.5O4, making it a multiferroic material. The optical studies on the prepared compounds exhibited blue color (Co2+ in Td geometry), purple color (Ni2+ in Td geometry), and simultaneous substitution of Co2+ and Fe3+ gives rise to blue‐green color owing to metal‐to‐metal charge transfer (MMCT) effect.

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Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack

Cited by 15 publications

References 41 publications

Artificial Sub-60 Millivolts/Decade Switching in a Metal–Insulator–Metal–Insulator–Semiconductor Transistor without a Ferroelectric Component

Artificial Sub-60 Millivolts/Decade Switching in a Metal–Insulator–Metal–Insulator–Semiconductor Transistor without a Ferroelectric Component

Current Prospects and Challenges in Negative-Capacitance Field-Effect Transistors

Stuffed Tridymite Structures: Synthesis, Structure, Second Harmonic Generation, Optical, and Multiferroic Properties

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