Stepwise sulfurization of MoO3 to MoS2 thin films studied by real-time X-ray scattering

Shaji, Ashin; Végsö, Karol; Sojková, M.; Hulman, Martin; Nádaždy, Peter; Halahovets, Yuriy; Slušná, Lenka Príbusová; Vojteková, Tatiana; Hrdá, Jana; Jergel, M.; Majková, E.; Wiesmann, Joerg; Šiffalovič, Peter

doi:10.1016/j.apsusc.2022.154772

Cited by 8 publications

(2 citation statements)

References 51 publications

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“…Thus, the CVD synthesis of MoS 2 from solid precursors is traditionally achieved above 750 • C [31]. In this research, the temperature and Ar flow rate were timed to use the sulfur flux to form intermediate compounds such as MoO 3−x and MoOS x , which promoted the synthesis of MoS 2 at a lower temperature of 650 • C. Chemical reactions, intermolecular forces, and thermodynamic considerations all play a role in determining how the presence of sulfur affects the evaporation temperature of MoO 3 [32]. The process's primary mechanism is the reaction of Mo and S species with the Si/SiO 2 substrate governed by the controlled transport of sulfur flux, which causes cooling of the intermediate compounds of Mo, resulting in the evaporation of MoO 3 at a temperature lower than its melting temperature.…”

Section: Cvd Process Setupmentioning

confidence: 99%

Towards Low-Temperature CVD Synthesis and Characterization of Mono- or Few-Layer Molybdenum Disulfide

Shendokar,

Aryeetey,

Hossen

et al. 2023

Micromachines

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Molybdenum disulfide (MoS2) transistors are a promising alternative for the semiconductor industry due to their large on/off current ratio (>1010), immunity to short-channel effects, and unique switching characteristics. MoS2 has drawn considerable interest due to its intriguing electrical, optical, sensing, and catalytic properties. Monolayer MoS2 is a semiconducting material with a direct band gap of ~1.9 eV, which can be tuned. Commercially, the aim of synthesizing a novel material is to grow high-quality samples over a large area and at a low cost. Although chemical vapor deposition (CVD) growth techniques are associated with a low-cost pathway and large-area material growth, a drawback concerns meeting the high crystalline quality required for nanoelectronic and optoelectronic applications. This research presents a lower-temperature CVD for the repeatable synthesis of large-size mono- or few-layer MoS2 using the direct vapor phase sulfurization of MoO3. The samples grown on Si/SiO2 substrates demonstrate a uniform single-crystalline quality in Raman spectroscopy, photoluminescence (PL), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and scanning transmission electron microscopy. These characterization techniques were targeted to confirm the uniform thickness, stoichiometry, and lattice spacing of the MoS2 layers. The MoS2 crystals were deposited over the entire surface of the sample substrate. With a detailed discussion of the CVD setup and an explanation of the process parameters that influence nucleation and growth, this work opens a new platform for the repeatable synthesis of highly crystalline mono- or few-layer MoS2 suitable for optoelectronic application.

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Section: Cvd Process Setupmentioning

confidence: 99%

Towards Low-Temperature CVD Synthesis and Characterization of Mono- or Few-Layer Molybdenum Disulfide

Shendokar,

Aryeetey,

Hossen

et al. 2023

Micromachines

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“…However, achieving large-scale, defect-free, and cost-effective production of MoS 2 remains a crucial goal. CVD-based synthesis of MoS 2 films has been accomplished through sulfurization of Mo-containing precursors, including Mo [ 16 ], MoO 2 [ 17 , 18 , 19 , 20 , 21 ], and MoO 3 [ 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 , 50 , 51 , 52 , 53 , 54 , 55 , 56 , 57 , 58 , 59 ]. Among these options, the utilization of MoO 3 powder as a precursor has emerged as the preferred method, owing to its ability to yield large-area single-crystal films with continuous coverage [ 42 , 43 , 44 , 45 , 46 , …”

Section: Introductionmentioning

confidence: 99%

CVD Synthesis of MoS2 Using a Direct MoO2 Precursor: A Study on the Effects of Growth Temperature on Precursor Diffusion and Morphology Evolutions

Somphonsane,

Chiawchan,

Bootsa-ard

et al. 2023

Materials

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In this study, the influence of growth temperature variation on the synthesis of MoS2 using a direct MoO2 precursor was investigated. The research showed that the growth temperature had a strong impact on the resulting morphologies. Below 650 °C, no nucleation or growth of MoS2 occurred. The optimal growth temperature for producing continuous MoS2 films without intermediate-state formation was approximately 760 °C. However, when the growth temperatures exceeded 800 °C, a transition from pure MoS2 to predominantly intermediate states was observed. This was attributed to enhanced diffusion of the precursor at higher temperatures, which reduced the local S:Mo ratio. The diffusion equation was analyzed, showing how the diffusion coefficient, diffusion length, and concentration gradients varied with temperature, consistent with the experimental observations. This study also investigated the impact of increasing the MoO2 precursor amount, resulting in the formation of multilayer MoS2 domains at the outermost growth zones. These findings provide valuable insights into the growth criteria for the effective synthesis of clean and large-area MoS2, thereby facilitating its application in semiconductors and related industries.

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Recent Advances in Development and Characterization of CVD Multilayer Composite Coatings—A Comprehensive Review

Ali

Gyurika

2023

Lecture Notes in Networks and Systems

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Stepwise sulfurization of MoO3 to MoS2 thin films studied by real-time X-ray scattering

Cited by 8 publications

References 51 publications

Towards Low-Temperature CVD Synthesis and Characterization of Mono- or Few-Layer Molybdenum Disulfide

Towards Low-Temperature CVD Synthesis and Characterization of Mono- or Few-Layer Molybdenum Disulfide

CVD Synthesis of MoS2 Using a Direct MoO2 Precursor: A Study on the Effects of Growth Temperature on Precursor Diffusion and Morphology Evolutions

Recent Advances in Development and Characterization of CVD Multilayer Composite Coatings—A Comprehensive Review

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