Sterically Induced Shape and Crystalline Phase Control of GaP Nanocrystals

Abstract

We demonstrate a novel synthetic scheme that can be used to control the crystalline phase and shape of GaP semiconductor nanocrystals. Our study shows that steric effects of surfactant ligands can modulate the crystalline phases and control the shapes of nanocrystals. The shape of the nanocrystals obtained varies from zero-dimensional spheres to one-dimensional rods via controlling the ratio between primary and tertiary alkylamines. III-V semiconductors (in our case: GaP) under 10 nm in width are first reported, and unique optical properties due to shape anisotropy are also observed.

Surface modification-induced phase transformation of hexagonal close-packed gold square sheets

“…Our observations suggested that primary amines may favour the formation of hcp-containing structures. This is consistent with previous reports demonstrating that primary amines favoured the formation of hexagonal wurtzite structures in certain semiconductors, such as GaP 43 . Therefore, the kind of capping agent used during coating of Ag facilitated the control over the type of phase transformation, which is likely caused by the interplay of the surfactant-metal bonding energy and the adhesive energy of the metal structures 44,45 .…”

Controllable Synthesis of Cu2O Microcrystals via a Complexant‐Assisted Synthetic Route

“…At the subsequent step, the crystal growth stage is a kinetically and thermodynamically controlled process that can yield more complicated shapes with some degree of shape tenability through changing the reaction parameters such as temperature, reaction time, concentration, PH value, and so on. [31][32][33][34] As a result, one can control the growth of the crystal by controlling the processing conditions based on the intrinsic properties of the crystal. To investigate the formation mechanism of Cu 2 O growth of porous microspheres and microcages in our aqueous system, the products formed at various stages of the growth process were examined.…”

Aqueous‐Solution Growth of GaP and InP Nanowires: A General Route to Phosphide, Oxide, Sulfide, and Tungstate Nanowires

“…[17] The size control of as-obtained nanowires in a certain range can be realized by adjusting some experimental parameters (e.g., amount of M(OH) 4 , reaction temperature, and time). For example, wirelike assemblies of InP nanoparticles with diameter of approximately 8 nm ( Figure 3A) were obtained by decreasing the amount of In(OH) 4 À , while other experimental parameters were kept constant; InP nanowires with diameters of approximately 15 nm (Figure 3 B) or 20 nm (Figure 3 C) were prepared by means of the above designed route at 160 8C for 48 h or 200 8C for 24 h, respectively.…”

“…The solution route is also an effective way to prepare nanowires; Buhro et al have pioneered the solutionliquid-solid (SLS) model for InP nanowhiskers with diameters ranging from 20 to 200 nm. [16] Cheon et al [17] also successfully grew GaP nanorods by means of thermal decomposition of a single molecular precursor tris(di-tert-butylphosphino)gallane (Ga(P'Bu 2 ) 3 ) in a hot mixture of amine stabilizers (liquid phase) at 330 8C. Banin et al [18] reported the synthesis of InP nanorods from the reaction between tris(trimethylsilyl)phosphine ((TMS) 3 P) and InCl 3 in trioctylphosphine oxide (TOPO) with gold nanoparticles as catalysts at 360 8C.…”