Stimulated Brillouin Scattering in a Transversely Magnetised Doped Centrosymmetric Semiconductor

Abstract

An analytical investigation is made for the stimulated Brillouin scattering (SBS) in a nearly centrosymmetric, doped semiconductor, which is subjected to a , transverse magnetic field. The origin of this nonlinear interaction lies in the third order optical susceptibility arising due to the nonlinear current density and electrostriction of the medium. The threshold condition is obtained for the onset of the SBS. The effective Brillouin susceptibility and the resulting gain is determined using the coupled mode theory. The effect of magnetic field and doping on the Brillouin susceptibility and Brillouin gain is also studied. Numerical estimations are made for n-type InSb a t 77 K duly irradiated by a pulsed 10.6 pm CO, laser. I n the highly doped regime the transverse magnetic field effects a significant decrease in the threshold and an appreciable enhancement in the gain constant. The analysis established the possibility of occurrence of optical phase conjugation in a doped semiconductor. Stimulierte Brillouin-Streuung (SBS) wird analytisch in einem fast zentrosymmetrischen, dotiertenHalbleiter im transversalen Magnetfeld untersucht. Die nichtlineare Wechselwirkung riihrt von der optischen Suszeptibilitit dritter Ordnung her, die durch die nichtlineare Stromdichte und Elektrostriktion des Mediums entsteht. Die Bedingung fur den Einsatz der SBS wird hergeleitet. Die effektive Brillouin-Suszeptibilitit und die resultierende Verstirkung wird mittels der Theorie der gekoppelten Moden gewonnen. Buch der EinfluB von Magnetfeld und Dotierung wird studiert.Numerische Abschatzungen werden fur n-InSb bei 77 K gemacht, das hinreichend stark durch einen gepulsten 10,6 pm C0,-Laser bestrahlt wird. Bei hoher Dotierung bewirkt das Magnetfeld eine signifikante Abnahme des Schwellenwerts und eine starke Zunahme der Verstarkung. Die Untersuchung zeigt, daD in einem dotierten Halbleiter optische Phasenkonjugation moglich ist.

Stimulated Brillouin Scattering of Electromagnetic Waves Propagating Obliquely in a Magnetoactive Centrosymmetric Semiconductor Plasma

“…From (15), it is found that the threshold field for SBS is strongly affected by the external magnetic field and through a change in carrier concentration of the medium by doping. The external magnetic field reduces the threshold field to an appreciable extent in the highly doped medium.…”

Comprehensive Review on Various Instabilities in Semiconductor Quantum Plasma

“…Stimulated Brillouin scattering (SBS) has been the topic of study in the recent times due to its various technological applications in the field of modern optics, like optical phase conjugation and laser induced fusion [167,168]. The stimulated Raman process was first reported by Ecehardt et al [169], who found that when a beam of ruby laser of considerable intensity was incident on a cell having nitrobenzene placed within the resonator, a stimulated Raman beam was…”

Analytical Calculation of Stimulated Brillouin Scattering in Magnetic Fields Applied to n-InSb

“…SBS is also regarded as one of the most effective nonlinear optical phenomena responsible for the occurrence of nonlinear optical phase conjugation (NOPC), due to its purity and high conversion efficiency [6]. Recently, it has been observed that in a doped centrosymmetric semiconductor crystal the transverse magnetic field is found to reduce the threshold pump field required for the occurrence of SBS in highly doping regimes [7].…”