Stimulated Electronic Transition Concept for an Erasable Optical Memory

Abstract

We investigate the size and crystal orientation of each small grain of ferroelectric SrBi 2 (Ta,Nb) 2 O 9 (SBTN) films within very small areas by an electron backscatter diffraction (EBSD) analysis technique. The obtained map of the grains reveals that the size of c-axis-oriented grains increases as the average grain size of the films increases. On the other hand, the size of a-axisoriented grains, each of which has a finite remnant polarization normal to the films, is almost unchanged. The area fraction of the a-axis-oriented grains is in good agreement with the measured polarizations of ferroelectric capacitors with different average grain sizes. This result implies that an increase in the number of relatively small a-axis-oriented grains is effective for increasing the total polarization of the ferroelectric films. The demonstrated analysis technique is very useful for the precise design of future high-density ferroelectric random access memories (FeRAMs) with very small capacitor structures, each of which consists of only a few grains.

Mechanical, elastic and anharmonic properties of zinc blende MgS compound

“…However, the huge development of optoelectronic applications has refocused the investigations of these compounds for potential uses such as in thinfilm electroluminscence devices [1,2] and random access optical erasable memory devices [3]. In the case of alkaline earth metal sulfides, the range of energy gaps available compared to that of conventional compounds strongly stimulates research.…”

Predictions of Electronic, Transport, and Structural Properties of Magnesium Sulfide (MgS) in the Rocksalt Structure

“…and Bagayoko, D. (2018) Predictions of Electronic, Transport, and Structural Properties of Magnesium Sulfide (MgS) in the Journal of Modern Physics to-optical devices [1]. Due to its large band gap, MgS has wide applications in blue-light emitting diodes and optical storage devices [2] [3]. It is a favorable material for active solar blind UV detection [4].…”

First Principle Investigation of Electronic, Transport, and Bulk Properties of Zinc-Blende Magnesium Sulfide

“…This material has been attracting much interest, in experimental and theoretical studies, due to its wide band gap and its technological applications. MgS has applications in optoelectronics, thin-film luminescent devices, blue light-emitting diodes, ultraviolet wavelength optics, optical erasable memory devices, and solar-blind UV detection devices [6][7][8][9]. The zb-MgS crystal has lattice matches with substrates like GaAs and ZnSe.…”