Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser

Tian, Ye; Yan, Jianchang; Zhang, Yun; Chen, Xiang; Guo, Yanan; Cong, Peipei; Sun, Lili; Wang, Qinjin; Guo, Enqing; Wei, Xiang; Wang, Junxi; Li, Jinmin

doi:10.1364/oe.23.011334

Cited by 20 publications

(5 citation statements)

References 21 publications

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“…It is notable that the dislocation density is close to that of AlN grown by the traditional two-step method, whose screw and edge dislocations are 2.0 × 10 7 and 4.3 × 10 9 cm −2 , respectively. 30) Cross-sectional transmission electron microscopy (TEM) and high-resolution TEM are carried out to check the AlN= graphene=sapphire interface. Figure 4…”

Section: Resultsmentioning

confidence: 99%

Graphene-assisted growth of high-quality AlN by metalorganic chemical vapor deposition

Zeng

Chen

Zhao

et al. 2016

Jpn. J. Appl. Phys.

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High-quality AlN films were directly grown on graphene/sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The graphene layers were directly grown on sapphire by atmospheric-pressure chemical vapor deposition (APCVD), a low-cost catalyst-free method. We analyzed the influence of the graphene layer on the nucleation of AlN at the initial stage of growth and found that sparse AlN grains on graphene grew and formed a continuous film via lateral coalescence. Graphene-assisted AlN films are smooth and continuous, and the full width at half maximum (FWHM) values for (0002) and reflections are 360 and 622.2 arcsec, which are lower than that of the film directly grown on sapphire. The high-resolution TEM images near the AlN/sapphire interface for graphene-assisted AlN films clearly show the presence of graphene, which kept its original morphology after the 1200 °C growth of AlN.

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Section: Resultsmentioning

confidence: 99%

Graphene-assisted growth of high-quality AlN by metalorganic chemical vapor deposition

Zeng

Chen

Zhao

et al. 2016

Jpn. J. Appl. Phys.

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“…32) In contrast, there are many reports on using a photoexcitation method as a low-threshold value of carriers as well required for laser oscillation. [33][34][35][36][37][38][39][40][41][42] In order to summarize these results, very low oscillation threshold power densities (several kilowatts per centimeter squared) are obtained for lasers in the UV-C region. On the other hand, most laser oscillation threshold power densities in the UV-B region are still as high as about several hundred kilowatts per centimeter squared.…”

Section: Introductionmentioning

confidence: 99%

Ultraviolet-B band lasers fabricated on highly relaxed thick Al_0.55Ga_0.45N films grown on various types of AlN wafers

Kawase

Ikeda

Sakuragi

et al. 2019

Jpn. J. Appl. Phys.

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In this paper, we investigated the dependence of threshold power density on the Al0.55Ga0.45N underlying layer film thickness in ultraviolet-B band (UV-B) lasers on various AlN wafers (four types). We also prepared and compared AlN templates for AlN freestanding substrates, AlN films fabricated by metalorganic vapor phase epitaxy, and annealed sputtered AlN templates at high temperature. The initial growth of AlGaN became three-dimensional by inserting a homoepitaxial Ga-doped AlN layer between the AlN template and Al0.55Ga0.45N, before it shifted to two-dimensional growth. It is possible to reduce the dislocation in Al0.55Ga0.45N using this mode. The dependence of AlGaN film thickness and that of the AlN template on samples with an inserted homoepitaxial Ga-doped AlN layer were studied. Compared with Al0.55Ga0.45N having a thickness of 5 μm, there was almost no noticeable difference between the dark spot density characterized by cathodoluminescence and the threshold power density in UV-B lasers for the AlN template. Besides, the characteristics were noticeably different for the film thickness of Al0.55Ga0.45N. The threshold power density in UV-B laser and dark spot density were reduced by increasing the film thickness. Through the optimization of the crystal growth condition, the threshold power density in UV-B laser and dark spot density were reduced to 36 kW cm−2 and 7.5 × 108 cm−2, respectively.

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“…The most shortwave stimulated emission with a wavelength λ = 214 nm has been achieved under the optical excitation of an AlN layer on a c-Al 2 O 3 substrate with a threshold power density of 9 MW/cm 2 [2] . The excitation of simulated emission in the range of 235-250 nm in Al 0.7 Ga 0.3 N/AlN heterostructures with multiple quantum wells under femtosecond optical pumping has been reported [3] .…”

Section: Introductionmentioning

confidence: 95%

“…Nowadays, the shortest wavelength of UV laser diodes based on GaN is 336 nm [1] . For the generation of shorter wave radiation, optical pumping is typically used [2][3][4][5] . The most shortwave stimulated emission with a wavelength λ = 214 nm has been achieved under the optical excitation of an AlN layer on a c-Al 2 O 3 substrate with a threshold power density of 9 MW/cm 2 [2] .…”

Section: Introductionmentioning

confidence: 99%

Light emission of heavily doped AlGaN structures under optical pumping

et al. 2018

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Spectral, temporal and polarization characteristics of spontaneous and stimulated luminescence of Al 0.5 Ga 0.5 N/AlN structures grown by molecular beam epitaxy were studied at the optical pulsed pumping with λ = 266 nm. Samples with a high degree of silicon doping were investigated. The vast majority of radiation falls on transitions within the band gap between the levels of defects. As a result, the radiation band embracing the whole visible range of more than 300 THz is observed in both spontaneous radiation and induced luminescence. In spontaneous radiation the band has a smooth spectral intensity distribution over the wavelengths, whereas induced radiation has its sharp peaks corresponding to the mode structure of the planar waveguide. The measured gain of the active medium is g ≈ 70 cm −1 for a weak signal.

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Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser

Cited by 20 publications

References 21 publications

Graphene-assisted growth of high-quality AlN by metalorganic chemical vapor deposition

Graphene-assisted growth of high-quality AlN by metalorganic chemical vapor deposition

Ultraviolet-B band lasers fabricated on highly relaxed thick Al_0.55Ga_0.45N films grown on various types of AlN wafers

Light emission of heavily doped AlGaN structures under optical pumping

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Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser

Cited by 20 publications

References 21 publications

Graphene-assisted growth of high-quality AlN by metalorganic chemical vapor deposition

Graphene-assisted growth of high-quality AlN by metalorganic chemical vapor deposition

Ultraviolet-B band lasers fabricated on highly relaxed thick Al0.55Ga0.45N films grown on various types of AlN wafers

Light emission of heavily doped AlGaN structures under optical pumping

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Ultraviolet-B band lasers fabricated on highly relaxed thick Al_0.55Ga_0.45N films grown on various types of AlN wafers