Stimulated emission mechanism of aluminum nitride

Ishii, Ryota; Nagashima, Toru; Yamamoto, Ryuta; Hitomi, Tatsuya; Funato, Mitsuru; Kawakami, Yoichi

doi:10.1103/physrevb.105.205206

Phys. Rev. B

2022

DOI: 10.1103/physrevb.105.205206

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Stimulated emission mechanism of aluminum nitride

Ryota Ishii

Toru Nagashima

Ryuta Yamamoto

et al.

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Cited by 7 publications

(1 citation statement)

References 66 publications

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“…For the well-explored 3D semiconductors (e.g., II–VI/III–V semiconductors), the X–X scattering is inhibited at room temperature due to their relatively small exciton binding energies E b , and thus high excitation density and optical pulse pumping (>10 14 cm –2 ) are needed. , An alternative idea is to utilize semiconductors with large exciton binding energy to stabilize excitons. van der Waals layered semiconductors, such as transition metal dichalcogenides (TMDCs) and black phosphorus, have shown attractive prospects in investigating many-body X–X scattering effects at room temperature due to their reduced dielectric screening and enhanced two-dimensional quantum confinement. − Nevertheless, X–X annihilation is easy to occur due to the large direct X–X Coulomb interaction and the absence of exciton–polariton states for monolayered/few-layered systems, which hinders the emergence of P-band emission .…”

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confidence: 99%

Strong Exciton–Exciton Scattering of Exfoliated van der Waals InSe toward Efficient Continuous-Wave Near-Infrared P-Band Emission

Yin

Zhao

et al. 2023

Nano Lett.

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P-band emission is a superlinear low-coherence emission through exciton–exciton (X–X) scattering into photon-like states. It occurs without the prerequisites of population inversion or macroscopical coherence, rendering lower power consumption than the widely explored superlinear low-coherence emissions including superfluorescence, amplified spontaneous emission, and random lasing, and holds great potential for speckle-free imaging and interferometric sensing. However, competition processes including exciton dissociation and annihilation undermine its operation at room temperature and/or low excitation conditions. Here we report room-temperature P-band emission from InSe microflakes with excitation density of 1010 cm–2, offering 2-orders-of-magnitude lower operation density compared to the state-of-the-art superlinear low-coherence emissions. The efficient P-band emission is attributed to a large X–X scattering strength of 0.25 μeV μm2 due to enhanced spatial confinement along with intrinsic material metrics of 3D/2D exciton complex and asymmetric electron/hole mass. These findings open an avenue toward strong low-coherence near-infrared light sources based on van der Waals semiconductors.

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mentioning

confidence: 99%

Strong Exciton–Exciton Scattering of Exfoliated van der Waals InSe toward Efficient Continuous-Wave Near-Infrared P-Band Emission

Yin

Zhao

et al. 2023

Nano Lett.

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Photoluminescence Excitation Spectroscopy of Stimulated Emission from AlGaN‐Based Multiple Quantum Wells with an Emission Wavelength Around 280 nm

Murotani,

Himeno,

Ohkawara

et al. 2024

Physica Status Solidi (b)

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Stimulated emission properties of AlGaN‐based multiple quantum wells with an emission wavelength of about 280 nm are studied by photoluminescence excitation (PLE) spectroscopy. The excitation power density dependence of the PLE spectra is evaluated at excitation energies from 4.4788 to 4.6293 eV, which allows the spontaneous and stimulated emission PLE spectra to be obtained. A clear peak is observed in the PLE spectrum for spontaneous emission, indicating that the spontaneous emission is due to the excitonic optical transition. A clear peak is also observed in the PLE spectrum for stimulated emission, suggesting that excitons are involved in the stimulated emission process. Furthermore, the threshold excitation power density for stimulated emission is analyzed as a function of the excitation energy and the threshold excitation power density depends on the excitation energy. The excitation energy at which the threshold excitation power density is minimized agrees with the peak of the stimulated emission PLE spectrum. This observation directly indicates that excitons are important in optical gain formation.

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Advantages of Ultrathin AlN/GaN/AlN Quantum Wells for Excitonic Population Distribution and Transition Features Studied by Phononic–Excitonic–Radiative Model

Chizaki,

Ishitani

2024

Physica Status Solidi (b)

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Excitons are expected to be a high‐efficiency emission source in UV light‐emitting devices. However, the damping of the excitonic laser oscillation has been reported under conditions where the excitonic states are expected to be populated in the conventional theory. In order to understand the exciton dynamics under the thermal nonequilibrium state, a theoretical model including various energy species in semiconductors such as electrons, phonons, and photons is required. Herein, a 2D phononic–excitonic–radiative model is constructed to analyze the exciton dynamics in a 2D system. 2D excitons with four principal quantum number states and the continuum in the lowest energy level of the AlN/GaN/AlN quantum wells are considered. It is found that the 2D phonon significantly augments the excitation transition rate. When the high recombination rate corresponding to stimulated emission is considered, the exciton binding energy of 108 meV is not enough to reduce the population in the high‐order discreet states and the continuum states, while the binding energy of 215 meV corresponding to the one monolayer GaN has an advantage of reducing these populations. The analysis of population flux has an advantage in discussing the increase in the kinetic energy transfer to the 1S exciton.

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Stimulated emission mechanism of aluminum nitride

Cited by 7 publications

References 66 publications

Strong Exciton–Exciton Scattering of Exfoliated van der Waals InSe toward Efficient Continuous-Wave Near-Infrared P-Band Emission

Strong Exciton–Exciton Scattering of Exfoliated van der Waals InSe toward Efficient Continuous-Wave Near-Infrared P-Band Emission

Photoluminescence Excitation Spectroscopy of Stimulated Emission from AlGaN‐Based Multiple Quantum Wells with an Emission Wavelength Around 280 nm

Advantages of Ultrathin AlN/GaN/AlN Quantum Wells for Excitonic Population Distribution and Transition Features Studied by Phononic–Excitonic–Radiative Model

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