STM studies of PtSi formation on Si(111) by solid state epitaxy

Pt-induced structures on Si(1 1 0) studied by STM

“…It has been shown that at coverages smaller than 1 monolayer (ML) and at room temperature (RT) Pt forms uniform layer on the surface. At higher coverage Pt atoms start diffuse into the bulk and form silicide (PtSi ½12 1kSi(1 0 0), PtSi ½11 0kSi(1 0 0) [9], PtSi ½0 1 0kSi(1 1 1), and PtSi ½1 0 0kSi(1 1 1) [10]). At high temperature diffusion may start at coverages even smaller than 1 ML, and Pt atoms occupy interstitial subsurface site distorting Si lattice, and as a result ffiffi ffi…”

“…However, it is little known about interaction of Pt with Si substrate at the initial stage of silicide formation. A number of studies have been carried out on Pt/Si(1 0 0) and Pt/Si(1 1 1) systems using low energy electron diffraction (LEED), Auger electron spectroscopy (AES) [5,6], photoemission spectroscopy [6,7], extended X-ray absorption fine structure (EXAFS) [8], Raman spectroscopy [9], scanning tunneling microscopy (STM) [10], and other methods. It has been shown that at coverages smaller than 1 monolayer (ML) and at room temperature (RT) Pt forms uniform layer on the surface.…”

Experimental observation of two-dimensional charge polarization in unisized platinum cluster disk bonded to silicon(1 1 1) surface

“…This can be achieved directly by means of space-resolved tunneling spectroscopy (scanning tunneling spectroscopy, STS), as it gives a space-and energy-resolved local density of electronic states of individual clusters. By means of this powerful technique, several research groups have elucidated the localized nature of electrons of clusters prepared on solid surfaces by mapping the local density of electronic states at a given energy [1][2][3][4][5][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23]. Bollinger et al have reported that metallic edge states are localized at a periphery of a monatomic-layered MoS 2 cluster having a diameter of $5 nm prepared on a reconstructed Au(1 1 1) surface [11].…”

Thermal transport across metal silicide-silicon interfaces: An experimental comparison between epitaxial and nonepitaxial interfaces

“…We studied films: (i) on both Si(100) and Si(111) substrates, (ii) using a wide range of Si substrate doping concentrations, (iii) using different surface cleaning methods, and (iv) two different growth techniques. The two different substrates orientations were used in order to generate different interfacial structures, since it is known that the rhombehedral compounds PtSi [29][30][31][32] and NiSi 33,34 films grow epitaxially on Si(111) surfaces, while these form polycrystalline structures on Si(100) surfaces. All the silicides studied here were grown by thermally induced reactions of the pure metal: Ti, Co, Ni, or Pt were deposited by RF-sputtering onto a Si substrate at 300K.…”