STM studies of the initial stages of growth of Sb on Si(100) surfaces

Effects of Ga-induced reconstructed surfaces and atomic steps on the morphology of GaSb islands on Si(100)

“…The cocoon-like protrusions Table 2 The density and size of GaSb islands and the ratio of the wire-like islands to the dot-like islands on the clean Si were dominantly observed with Si dimer rows [square in inset] over a surface area. These protrusions were similar to the Sb clusters formed on the Si dimer rows below 300 • C [21], indicating that the Sb-induced Si(1 0 0) surface is primarily formed. Moreover, the Ga coverage is 0.04 ML in Fig.…”

An STM and LEED study of MOCVD-prepared P/Ge (1 0 0) to (1 1 1) surfaces

“…The only P/Ge surface which has been well-characterized is the (1 0 0) surface [2,3]. It is terminated with V-V dimers, much like the other dimerized V/Ge and V/Si(1 0 0) surfaces, such as P/Si [4][5][6], As/Si [7], Sb/Si [8,9], As/Ge [10], and Sb/Ge [11][12][13][14]. However, the surface structures for other potentially useful P/Ge surfaces such as (3 1 1) or (5 1 1) are virtually unknown.…”

Effect of surface intermixing on the morphology of Sb-terminated Ge(100) surfaces

“…The interaction of Sb with Si and Ge͑100͒ has been studied using a number of techniques including x-ray and ultra-violet photoelectron spectroscopy, 10,12-15 surface x-ray diffraction, 16 LEED, 11,17,18 high energy electron diffraction, 10,12 STM, [17][18][19][20][21][22][23][24] scanning tunneling spectroscopy ͑STS͒, 20 ion channeling, 25 and x-ray absorption. 17 On Si͑100͒, most studies agree that deposition of Sb multilayers followed by annealing at elevated temperatures to remove all but one Sb layer results in a (2ϫ1) reconstructed surface.…”

“…Recently, however, Garni et al provided convincing STM and STS evidence that at low Sb coverages annealing at 520 K causes Sb to incorporate into the Si surface creating ordered vacancies and (2ϫ1) reconstructed Si islands on the surface. 20 It is unclear if intermixing also occurs when the Sb coverage approaches 1 monolayer ͑ML͒. At these coverages, it was found that the surface structure depends on preparation conditions.…”